Mechanism of carrier injection in (Ni/Au) /p -Alx Ga1-x N:Mg (0≤x<0.1) Ohmic contacts

Applied Physics Letters

Volumn 95, Issue 16, 2009, Pages

  Nikishin, S ^a   Chary, I ^a   Borisov, B ^a   Kuryatkov, V ^a   Kudryavtsev, Yu ^b   Asomoza, R ^b   Karpov, S Yu ^c   Holtz, M ^d  

^a Texas Tech University   (United States)

^b DEPARTAMENTO DE FÍSICA   (Mexico)

^c SOFT IMPACT LTD   (Russian Federation)

^d TEXAS TECH UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN; CARRIER INJECTION; CURRENT INJECTIONS; INJECTION MECHANISMS; MG CONCENTRATIONS; SCHOTTKY BARRIER HEIGHTS; SPECIFIC CONTACT RESISTANCES; TEMPERATURE DEPENDENCE;

ELECTRIC CONTACTORS; GALLIUM NITRIDE; OHMIC CONTACTS; SCHOTTKY BARRIER DIODES; SEMICONDUCTING GALLIUM; TEMPERATURE DISTRIBUTION; THERMIONIC EMISSION;

ACTIVATION ENERGY;

EID: 70350423017     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3242420     Document Type: Article

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