Depletion region effects in Mg-doped GaN

Journal of Applied Physics

Volumn 87, Issue 2, 2000, Pages 770-775

  Kozodoy, Peter ^a   DenBaars, Steven P ^a   Mishra, Umesh K ^a  

^a University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001276821     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.371939     Document Type: Article

References (22)

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15. A p-n junction layer structure is preferable to a Schottky diode for these variable-frequency capacitance measurements because a much lower series resistance can be obtained using the n-GaN layer. As pointed out in Ref. 4, erroneous data may be generated in high-frequency measurements as a result of a large series resistance.
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