Stacking and electric field effects in atomically thin layers of GaN

Journal of Physics Condensed Matter

Volumn 25, Issue 34, 2013, Pages

  Xu, Dongwei ^a   He, Haiying ^a   Pandey, Ravindra ^a   Karna, Shashi P ^b  

^a MICHIGAN TECHNOLOGICAL UNIVERSITY   (United States)

^b U S ARMY RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

APPLIED FIELD; CANDIDATE MATERIALS; NANO SCALE; NOVEL APPLICATIONS; PLANAR CONFIGURATIONS; THIN LAYERS; TRI LAYERS; TUNABILITIES;

ELECTRONIC PROPERTIES; ENERGY GAP; GALLIUM NITRIDE; MULTILAYERS;

ELECTRIC FIELD EFFECTS;

EID: 84881276483     PISSN: 09538984     EISSN: 1361648X     Source Type: Journal    
DOI: 10.1088/0953-8984/25/34/345302     Document Type: Article

References (51)

1. Matovic J and Jakšić Z 2009 Nanomembrane: a new MEMS/NEMS building block Micro Electronic and Mechanical Systems ed Kenichi Takahata (Rijeka: InTech)
2. Rogers J A, Lagally M G and Nuzzo R G 2011 Synthesis, assembly and applications of semiconductor nanomembranes Nature 477 45-53
3. Cavallo F and Lagally M G 2012 Semiconductor nanomembranes: a platform for new properties via strain engineering Nanoscale Res. Lett. 7 1-10
4. Nakamura S, Pearton S and Fasol G 2000 The Blue Laser Diode: The Complete Story (Berlin: Springer)
5. Krames M R et al 2007 Status and future of high-power light-emitting diodes for solid-state lighting J. Disp. Technol. 3 160-75 (Pubitemid 46808672)
6. Mishra U K et al 2008 GaN-based RF power devices and amplifiers Proc. IEEE 96 287-305
7. Maruska H P and Tietjen J J 1969 The preparation and properties of vapor-deposited single-crystal-line GaN Appl. Phys. Lett. 15 327-9
8. Ponce F A and Bour D P 1997 Nitride-based semiconductors for blue and green light-emitting devices Nature 386 351-9 (Pubitemid 27154469)
9. Joblot S et al 2005 High-electron-mobility AlGaN/GaN heterostructures grown on Si(001) by molecular-beam epitaxy Appl. Phys. Lett. 87 133505 (Pubitemid 41717326)
10. Zhang Y, Leung B and Han J 2012 A liftoff process of GaN layers and devices through nanoporous transformation Appl. Phys. Lett. 100 181908
11. Tiginyanu I, Popa V and Stevens-Kalceff M A 2011 Ultra-thin GaN membranes fabricated by using surface charge lithography ECS Trans. 35 13-9
12. 2 (100) for nanoelectromechanical systems Appl. Phys. Lett. 84 4756-8
13. Mei Y et al 2009 Fabrication, self-assembly, and properties of ultrathin AlN/GaN porous crystalline nanomembranes: tubes, spirals, and curved sheets ACS Nano 3 1663-8
14. Chen Q A et al 2011 Tailoring band gap in GaN sheet by chemical modification and electric field: ab initio calculations Appl. Phys. Lett. 98 053102
15. Amorim R G et al 2013 Strain- and electric field-induced band gap modulation in nitride nanomembranes J. Phys.: Condens. Matter 25 195801
16. Yang Z and Ni J 2010 Modulation of electronic properties of hexagonal boron nitride bilayers by an electric field: a first principles study J. Appl. Phys. 107 104301
17. Zhong X et al 2012 Electronic structure and quantum transport properties of trilayers formed from graphene and boron nitride Nanoscale 4 5490-8
18. Ramasubramaniam A, Naveh D and Towe E 2011 Tunable band gaps in bilayer graphene-BN heterostructures Nano Lett. 11 1070-5
19. Min H et al 2007 Ab initio theory of gate induced gaps in graphene bilayers Phys. Rev. B 75 155115
20. Lui C H et al 2011 Observation of an electrically tunable band gap in trilayer graphene Nature Phys. 7 944-7
21. Balu R et al 2012 Effect of electric field on the band structure of graphene/boron nitride and boron nitride/boron nitride bilayers Appl. Phys. Lett. 100 052104
22. Kresse G and Furthmüller J 1996 Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set Phys. Rev. B 54 11169-86
23. Kresse G and Joubert D 1999 From ultrasoft pseudopotentials to the projector augmented-wave method Phys. Rev. B 59 1758-75
24. Perdew J P, Burke K and Ernzerhof M 1996 Generalized gradient approximation made simple Phys. Rev. Lett. 77 3865-8 (Pubitemid 126631804)
25. Grimme S 2006 Semiempirical GGA-type density functional constructed with a long-range dispersion correction J. Comput. Chem. 27 1787-99 (Pubitemid 44672561)
26. Costales A et al 2002 Chemical bonding in group III nitrides J. Am. Chem. Soc. 124 4116-23 (Pubitemid 34310925)
27. Pandey R, Jaffe J E and Harrison N M 1994 Ab-initio study of high-pressure phase-transition in GaN J. Phys. Chem. Solids 55 1357-61
28. Paszkowicz W, Podsiadło S and Minikayev R 2004 Rietveld-refinement study of aluminium and gallium nitrides J. Alloys Compounds 382 100-6
29. Stampfl C and Van de Walle C G 1999 Density-functional calculations for III-V nitrides using the local-density approximation and the generalized gradient approximation Phys. Rev. B 59 5521-35
30. Lee S M et al 1999 Stability and electronic structure of GaN nanotubes from density-functional calculations Phys. Rev. B 60 7788-91
31. Sahin H et al 2009 Monolayer honeycomb structures of group-IV elements and III-V binary compounds: first-principles calculations Phys. Rev. B 80 155453
32. Zoroddu A et al 2001 First-principles prediction of structure, energetics, formation enthalpy, elastic constants, polarization, and piezoelectric constants of AlN, GaN, and InN: comparison of local and gradient-corrected density-functional theory Phys. Rev. B 64 045208
33. de Andres P L, Ramírez R and Vergés J A 2008 Strong covalent bonding between two graphene layers Phys. Rev. B 77 045403
34. Zhong X et al 2011 First-principles study of strain-induced modulation of energy gaps of graphene/BN and BN bilayers Phys. Rev. B 83 193403
35. Yuan S, Roldán R and Katsnelson M I 2011 Landau level spectrum of ABA- and ABC-stacked trilayer graphene Phys. Rev. B 84 125455
36. Castro Neto A H et al 2009 The electronic properties of graphene Rev. Mod. Phys. 81 109-62
37. Zou K et al 2013 Transport studies of dual-gated ABC and ABA trilayer graphene: band gap opening and band structure tuning in very large perpendicular electric fields Nano Lett. 13 369-73
38. Li H et al 2010 Electronic structures and magnetic properties of GaN sheets and nanoribbons J. Phys. Chem. C 114 11390-4
39. Li H et al 2012 Layer number-dependent structural evolution of two-dimensional diamond films Chem. Phys. Lett. 550 130-3
40. Marom N et al 2010 Stacking and registry effects in layered materials: the case of hexagonal boron nitride Phys. Rev. Lett. 105 046801
41. Jeong T S et al 2005 Electric-field-induced quenching effect of photoluminescence on p-GaN films J. Korean Phys. Soc. 46 968-72 (Pubitemid 40587102)
42. Levinshtein M E, Rumyantsev S L and Shur M S (ed) 1999 Handbook Series on Semiconductor Parameters vols 1 and 2 (London: World Scientific)
43. Chow T P and Ghezzo M J 1996 SiC Power Devices MRS Proceedings 423 9-21
44. Britnell L et al 2012 Electron tunneling through ultrathin boron nitride crystalline barriers Nano Lett. 12 1707-10
45. Edgar J H (ed) 1994 Properties of Group III Nitrides, Electronic Materials Information Service (EMIS) (London: INSPEC, Institution of Electrical Engineers)
46. Li F et al 2010 UV photovoltaic cells fabricated utilizing GaN nanorod/Si heterostructures J. Cryst. Growth 312 2320-3
47. Park C M et al 2006 Optical properties of GaN nanorods grown by molecular-beam epitaxy; dependence on growth time Nanotechnology 17 952 (Pubitemid 43190488)
48. Hersee S D, Sun X and Wang X 2006 The controlled growth of GaN nanowires Nano Lett. 6 1808-11 (Pubitemid 44327551)
49. Kuykendall T et al 2004 Crystallographic alignment of high-density gallium nitride nanowire arrays Nature Mater. 3 524-8
50. Bae S Y et al 2003 Large-scale synthesis of gallium nitride nanosaws using a chemical vapor deposition method Chem. Phys. Lett. 373 620-5 (Pubitemid 36613861)
51. Goldberger J et al 2003 Single-crystal gallium nitride nanotubes Nature 422 599-602 (Pubitemid 36460409)