Strain- and electric field-induced band gap modulation in nitride nanomembranes

Journal of Physics Condensed Matter

Volumn 25, Issue 19, 2013, Pages

  Amorim, Rodrigo G ^a   Zhong, Xiaoliang ^a   Mukhopadhyay, Saikat ^a   Pandey, Ravindra ^a   Rocha, Alexandre R ^b,c   Karna, Shashi P ^d  

^a MICHIGAN TECHNOLOGICAL UNIVERSITY   (United States)

^b UNIVERSIDADE FEDERAL DO ABC   (Brazil)

^c SÃO PAULO STATE UNIVERSITY UNESP   (Brazil)

^d U S ARMY RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BANDGAP MODULATION; BULK COUNTERPART; ELECTRONIC MOBILITY; FIELD-INDUCED; FIELD-INDUCED MODULATION; GROUP III NITRIDES; SEMICONDUCTOR-METAL TRANSITION; TECHNOLOGICAL APPLICATIONS;

ALUMINUM NITRIDE; DENSITY FUNCTIONAL THEORY; ELECTRIC FIELDS; GALLIUM NITRIDE; MODULATION; NANOSTRUCTURES;

ENERGY GAP;

NANOMATERIAL; NITROGEN;

ARTICLE; ARTIFICIAL MEMBRANE; CHEMICAL MODEL; CHEMICAL STRUCTURE; CHEMISTRY; COMPUTER SIMULATION; ELECTRIC CONDUCTIVITY; ELECTROMAGNETIC FIELD; ELECTRON TRANSPORT; MATERIALS TESTING; PARTICLE SIZE; RADIATION EXPOSURE; SEMICONDUCTOR; ULTRASTRUCTURE; YOUNG MODULUS;

COMPUTER SIMULATION; ELASTIC MODULUS; ELECTRIC CONDUCTIVITY; ELECTROMAGNETIC FIELDS; ELECTRON TRANSPORT; MATERIALS TESTING; MEMBRANES, ARTIFICIAL; MODELS, CHEMICAL; MODELS, MOLECULAR; NANOSTRUCTURES; NITROGEN; PARTICLE SIZE; SEMICONDUCTORS;

EID: 84876905182     PISSN: 09538984     EISSN: 1361648X     Source Type: Journal    
DOI: 10.1088/0953-8984/25/19/195801     Document Type: Article

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