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Volumn 35, Issue 6, 2011, Pages 13-19

Ultra-thin GaN membranes fabricated by using surface charge lithography

Author keywords

[No Author keywords available]

Indexed keywords

ETCHING; FABRICATION; GALLIUM NITRIDE; III-V SEMICONDUCTORS; LITHOGRAPHY; SEMICONDUCTOR DEVICES; SURFACE CHARGE;

EID: 79960795409     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.3570841     Document Type: Conference Paper
Times cited : (2)

References (14)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.