UV photovoltaic cells fabricated utilizing GaN nanorod/Si heterostructures

Journal of Crystal Growth

Volumn 312, Issue 16-17, 2010, Pages 2320-2323

  Li, F ^a   Lee, S H ^a   You, J H ^a   Kim, T W ^a   Lee, K H ^b   Lee, J Y ^b   Kwon, Y H ^c   Kang, T W ^c  

^a Hanyang University   (South Korea)

^b Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^c Dongguk University   (South Korea)

Author keywords

A1. Nanostructures; A3. Hydrid vapor phase epitaxy; B1. Nanomaterials; B3. Solar cells

Indexed keywords

A1. NANOSTRUCTURES; B3. SOLAR CELLS; B3.SOLAR CELL; CELL-BASED; CRYSTALLINE NANORODS; CURRENT VOLTAGE CURVE; GAN NANORODS; HETEROSTRUCTURES; NANO-MATERIALS; PHOTOLUMINESCENCE SPECTRUM; POTENTIAL APPLICATIONS; POWER CONVERSION EFFICIENCIES; SELECTED AREA ELECTRON DIFFRACTION PATTERN; SI (1 1 1); SI SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY IMAGES; ULTRA-VIOLET; UV LIGHT; WELL-ALIGNED;

CONVERSION EFFICIENCY; CRYSTAL GROWTH; GALLIUM NITRIDE; HETEROJUNCTIONS; HOLOGRAPHIC INTERFEROMETRY; NANORODS; NANOSTRUCTURED MATERIALS; PHOTOVOLTAIC CELLS; SCANNING ELECTRON MICROSCOPY; SILICON; SOLAR CELLS; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY; VAPOR PHASE EPITAXY; VAPORS;

GALLIUM ALLOYS;

EID: 77955282540     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2010.04.052     Document Type: Article

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