메뉴 건너뛰기




Volumn 87, Issue 13, 2005, Pages 1-3

High-electron-mobility AlGaN/GaN heterostructures grown on Si(001) by molecular-beam epitaxy

Author keywords

[No Author keywords available]

Indexed keywords

AMMONIA; CARRIER CONCENTRATION; ELECTRON GAS; ELECTRON MOBILITY; GALLIUM NITRIDE; HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; SILICON COMPOUNDS; TEMPERATURE DISTRIBUTION;

EID: 28344432626     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2067698     Document Type: Article
Times cited : (32)

References (16)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.