Die separation and rupture strength for deep reactive ion etched silicon wafers

Journal of Micromechanics and Microengineering

Volumn 23, Issue 8, 2013, Pages

  Porter, D A ^a   Berfield, T A ^a  

^a University of Louisville   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEEP REACTIVE ION ETCHED; DEEP REACTIVE ION ETCHING; FAILURE STRESS; FRACTURE EXPERIMENTS; MEAN AND STANDARD DEVIATIONS; RUPTURE STRENGTH; SEPARATION TECHNIQUES; STANDARD DEVIATION;

DIES; SEPARATION; SILICON; STATISTICS; WEIBULL DISTRIBUTION;

SILICON WAFERS;

EID: 84881170340     PISSN: 09601317     EISSN: 13616439     Source Type: Journal    
DOI: 10.1088/0960-1317/23/8/085020     Document Type: Article

References (22)

1. Lei W, Kumar A and Yalamanchili R 2012 Die singulation technologies for advanced packaging: a critical review J. Vac. Sci. Technol. B 30 040801
2. Kroninger W and Mariani F 2006 Thinning and singulation of silicon: root causes of the damage in thin chips IEEE 56th Electronic Components and Technology Conf. pp 1317-22 (Pubitemid 44929849)
3. Cooke M 2006 Scribe and dice Adv. Semicond. Mag. 19 20-24
4. Alballak R 2007 Dicing MEMS handling with care Adv. Packag. 16 20-22
5. Magjeed B, Paul I, Razeeb K M, Barton J and O'Mathuna S C 2006 Microstructural, mechanical, fractural and electrical characterization of thinned and singulated silicon test die J. Micromech. Microeng. 16 1519-29 (Pubitemid 44102299)
6. Landesberger C, Klink G, Schwinn G and Aschenbrenner R 2001 New dicing and thinning concept improves mechanical reliability of ultra thin silicon Proc. Int. Symp. on Advanced Packaging Materials Processes, Properties and Interfaces pp 92-97 (Pubitemid 32457041)
7. Agarwal A, Mohanraj S, Premachandran C S and Singh J 2005 Process technique for singulating fragile devices Proc. IEEE 7th Electronics Packaging Technology Conf. p 4
8. Awatani Y, Matsumoto Y and Kato K 2002 Damage free dicing method for MEMS devices IEEE/LEOS Int. Conf. on Optical MEMS pp 137-8
9. Acker M 2001 The back-end process: step 11 - scribe and break Adv. Packag. 10 45
10. Venkatakrishnan K and Tan B 2007 Thin silicon wafer dicing with a dual-focused laser beam J. Micromech. Microeng. 17 2505-15 (Pubitemid 350242894)
11. Kumagai M, Sakamoto T and Ohmura E 2007 Laser processing of doped silicon wafer by the stealth dicing Semiconductor Manufacturing Symp. pp 1-4
12. Jaeger R C 2002 Introduction to Microelectronic Fabrication 2nd edn (Englewood Cliffs, NJ: Prentice-Hall) p 279
13. Selbrede S and Pilloux Y 2009 DRIE technology for MEMS Tegal Corporation, Plasma Users Group
14. Laermer F, Schilp A, Funk K and Offenberg M 1999 Bosch deep silicon etching: improving uniformity and etch rate for advanced MEMS applications MEMS'99: Proc. 12th IEEE Int. Conf. onMicro Electro Mechanical Systems pp 211-6
15. Kiyoshi A 2010 Panasonic's plasma dicing technology SUSS Report (April)
16. Sokmen U, Stranz A, Fundling S, Wehmann H-H, Bandalo V, Bora A, Tornow M, Waag A and Peiner E 2009 Capabilities of ICP-RIE cryogenic dry etching of silicon: review of exemplary microstructures J. Micromech. Microeng. 19 105005
17. Sari I, Zeimpekis I and Kraft M 2010 A full wafer dicing free dry release process for MEMS devices Eurosensor 24 Conf.; Procedia Eng. 5 850-3
18. Overstolz T, Clerc P A, Noell W, Zickar M and De Rooij N F 2004 A clean wafer-scale chip-release process without dicing based on vapor phase etching MEMS: Proc. 17th IEEE Int. Conf. on Micro Electro Mechanical Systems pp 717-20
19. Heriban D, Agnus J, Petrini V and Gauthier M 2009 A mechanical de-tethering technique for silicon MEMS etched with a DRIE process J. Micromech. Microeng. 19 055011
20. Porter D and Berfield T 2011 Die separation strength for deep reactive ion etched wafers experimental and applied mechanics SEM'11: Conf. Proc. Society for Experimental Mechanics Series pp 383-91
21. Ikehara T and Tsuchiya T 2009 Effects of anisotropic elasticity on stress concentration in micro mechanical structures fabricated on (0 0 1) single-crystal silicon films J. Appl. Phys. 105 093524
22. 6 flow rate on the etched surface profile and bottom grass formation in deep reactive ion etching process J. Phys.: Conf. Ser. 34 577-82 (Pubitemid 43812486)