Capabilities of ICP-RIE cryogenic dry etching of silicon: Review of exemplary microstructures

Journal of Micromechanics and Microengineering

Volumn 19, Issue 10, 2009, Pages

  Sokmen U ^a   Stranz, A ^a   Fundling S ^a   Wehmann, H H ^a   Bandalo, V ^a   Bora, A ^a   Tornow, M ^a   Waag, A ^a   Peiner, E ^a  

^a TECHNICAL UNIVERSITY OF BRAUNSCHWEIG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BLACK SILICON; DEEP STRUCTURE; ETCH PROFILE; ETCH RATES; ETCHED STRUCTURES; HIGH ASPECT RATIO; ICP-RIE; LATERAL ETCHING; MEMBRANE STRUCTURES; MICRO ELECTRO MECHANICAL SYSTEM; NANO CONTACTS; OXYGEN CONTENT; PHOTORESIST FILM; PHOTORESIST MASK; PROCESS TEMPERATURE; SILICON MEMBRANES; SUBMICRON; SUBMICRON DIAMETERS;

ASPECT RATIO; CRYOGENICS; ELECTROMECHANICAL DEVICES; FLEXIBLE STRUCTURES; INDUCTIVELY COUPLED PLASMA; MEMBRANES; NANOCANTILEVERS; OXYGEN; PHOTORESISTORS; PHOTORESISTS; PLASMA ETCHING; SINGLE CRYSTALS; SURFACE TREATMENT;

DRY ETCHING;

EID: 70350647602     PISSN: 09601317     EISSN: 13616439     Source Type: Journal    
DOI: 10.1088/0960-1317/19/10/105005     Document Type: Article

References (20)

1. Jansen H V, de Boer M J, Unnikrishnan S, Louwerse M C and Elwenspoek M C 2009 Black silicon method: X. A review on high speed and selective plasma etching of silicon with profile control: an in-depth comparison between Bosch and cryostat DRIE processes as a roadmap to next generation equipment J. Micromech. Microeng. 19 1-41
2. Sainiemi L and Franssila S 2007 Mask material effects in cryogenic deep reactive ion etching J. Vac. Sci. Technol. B 25 801-7
3. y passivation layer in silicon cryo-etching J. Appl. Phys. 98 104901
4. 2 etching process J. Micromech. Microeng. 14 190-6
5. Lärmer F and Schilp A 1994 German Patent No. DE4241045
6. Tachi S, Tsujimoto K, Arai S and Kure T 1991 Low-temperature dry etching J. Vac. Sci. Technol A 9 796-803
7. 2 cryogenic etching Appl. Phys. Lett. 94 071501
8. 6 Appl. Phys. Lett. 57 431-3
9. de Boer M J, Gardeniers J G, Jansen H V, Smulders E, Gilde M J, Roelofs G, Sasserath J N and Elwenspoek M 2002 Guidelines for etching silicon MEMS structures using fluorine high-density plasmas at cryogenic temperatures J. Microelectromech. Syst. 11 385-401
10. Tillocher T, Dussart R, Mellhaoui X, Lefaucheux P, Mekkakia Maaza N, Ranson P, Boufnichel M and Overzet L J 2006 Oxidation threshold in silicon etching at cryogenic temperatures J. Vac. Sci. Technol. A 24 1073-82
11. 2 plasma J. Vac. Sci. Technol. A 22 606-15
12. Buchholz K, Tinazli A, Kleefen A, Dorfner D, Pedone D, Rant U, Tampé R, Abstreiter R and Tornow M 2008 Silicon-on-insulator based nanopore cavity arrays for lipid membrane investigation Nanotechnology 19 445305
13. Cattani-Scholz A, Pedone D, Dubey M, Neppl S, Nickel B, Feulner P, Schwartz J, Abstreiter G and Tornow M 2008 Organophosphonate based PNA-functionalization of silicon nanowires for label-free DNA detection ACS Nano 2 1653-60
14. Fündling S et al 2008 Gallium-nitride heterostructures on 3D-structured silicon Nanotechnology 19 405301
15. Stranz A, Sökmen, Peiner E and Waag A 2008 Sapphire on silicon assembly using a nanostructured compliant interface Techn. Dig. 22nd Int. Conf. Eurosensors (Dresden, Germany, 7-10 Sep.)
16. Mertens C 2004 Die Niedertemperatur-Verbindungstechnik der Leistungselektronik Dissertation TU Braunschweig
17. 2 plasma J. Phys. 38 3395-402
18. Balke M, Peiner E and Doering L 2008 A new micromachined sensor system for tactile measurement of high aspect ratio microstructures Microsyst. Technol. 14 543-9
19. Sökmen, Peiner E, Waag A, Ababneh A, Seidel H and Schmid U 2008 Dry etching of sputter-deposited AlN-thin films for the realization of piezoelectric MEMS 19th MicroMechanics Europe Workshop (Aachen, Germany, 28-30 Sep.)
20. 2 cryogenic plasma J. Micromech. Microeng. 12 390-4