Continuous wafer-scale graphene on cubic-SiC(001)

Nano Research

Volumn 6, Issue 8, 2013, Pages 562-570

  Chaika, Alexander N ^a,b   Molodtsova, Olga V ^c   Zakharov, Alexei A ^d   Marchenko, Dmitry ^e   Sánchez Barriga, Jaime ^e   Varykhalov, Andrei ^e   Shvets, Igor V ^b   Aristov, Victor Yu ^a,c  

^a INSTITUTE OF SOLID STATE PHYSICS   (Russian Federation)

^b TRINITY COLLEGE DUBLIN   (Ireland)

^c DESY   (Germany)

^d LUND UNIVERSITY   (Sweden)

^e HAHN MEITNER INSTITUT   (Germany)

Author keywords

ARPES; cubic SiC(001); graphene; LEED; LEEM; STM

Indexed keywords

EID: 84881060531     PISSN: 19980124     EISSN: 19980000     Source Type: Journal    
DOI: 10.1007/s12274-013-0331-9     Document Type: Article

References (31)

1. Novoselov, K. S.; Geim, A. K.; Morozov, S. V.; Jiang, D.; Zhang, Y.; Dubonos, S. V.; Grigorieva, I. V.; Firsov, A. A. Electric field effect in atomically thin carbon films. Science2004, 306, 666-669.
2. Novoselov, K. S.; Geim, A. K.; Morozov, S. V.; Jiang, D.; Katsnelson, M. I.; Grigorieva, I. V.; Dubonos, S. V.; Firsov, A. A. Two-dimensional gas of massless Dirac fermions in graphene. Nature2005, 438, 197-200.
3. Sprinkle, M.; Siegel, D.; Hu, Y.; Hicks, J.; Tejeda, A.; Taleb-Ibrahimi, A.; Le Fevre, P.; Bertran, F.; Vizzini, S.; Enriquez, H.; et al. First direct observation of a nearly ideal graphene band structure. Phys. Rev. Lett. 2009, 103, 226803.
4. Berger, C.; Song, Z.; Li, T.; Li, X.; Ogbazghi, A. Y.; Feng, R.; Dai, Z.; Marchenkov, A. N.; Conrad, E. H.; First, P. N.; et al. Ultrathin epitaxial graphite: 2D electron gas properties and a route toward graphene-based nanoelectronics. J. Phys. Chem. B2004, 108, 19912-19916.
5. Berger, C.; Song, Z.; Li, X.; Wu. X.; Brown, N.; Naud, C.; Mayou, D.; Li, T.; Hass, J.; Marchenkov, A. N.; et al. Electronic confinement and coherence in patterned epitaxial graphene. Science2006, 312, 1191-1196.
6. Emtsev, K. V.; Bostwick, A.; Horn, K.; Jobst, J.; Kellogg, G. L.; Ley, L.; McChesney, J.; Ohta, T.; Reshanov, S. A.; Rohr, J.; et al. Towards wafer-size graphene layers by atmospheric pressure graphitization of silicon carbide. Nat. Mater. 2009, 8, 203-207.
7. Ouerghi, A.; Kahouli, A.; Lucot, D.; Portail, M.; Travers, L.; Gierak, J.; Penuelas, J.; Jegou, P.; Shukla, A.; Chassagne, T. et al. Epitaxial graphene on cubic SiC(111)/Si(111) substrate. Appl. Phys. Lett. 2010, 96, 191910.
8. Coletti, C.; Emtsev, K. V.; Zakharov, A. A.; Ouisse, T.; Chaussende, D.; Starke, U. Large area quasi-free standing monolayer graphene on 3C-SiC(111). Appl. Phys. Lett. 2011, 99, 081904.
9. Portail, M.; Michon, A.; Vezian, S.; Lefebvre, D.; Chenot, S.; Roudon, E.; Zielinski, M.; Chassagne, T.; Tiberj, A.; Camassel, J.; et al. Growth mode and electric properties of graphene and graphitic phase grown by argon-propane assisted CVD on 3C-SiC/Si and 6H-SiC. J. Cryst. Growth2012, 349, 27-35.
10. Suemitsu, M.; Fukidome, H. Epitaxial graphene on silicon substrates. J. Phys. D: Appl. Phys. 2010, 43, 374012.
11. Aristov, V. Y.; Urbanik, G.; Kummer, K.; Vyalikh, D. V.; Molodtsova, O. V.; Preobrajenski, A. B.; Zakharov, A. A.; Hess, C.; Hänke, T.; Büchner, B.; et al. Graphene synthesis on cubic SiC/Si wafers. Perspectives for mass production of graphene-based electronic devices. Nano Lett. 2010, 10, 992-995.
12. Ouerghi, A.; Ridene, M.; Balan, A.; Belkhou, R.; Barbier, A.; Gogneau, N.; Portail, M.; Michon, A.; Latil, S.; Jegou, P.; et al. Sharp interface in epitaxial graphene layers on 3C-SiC(100)/Si(100) wafers. Phys. Rev. B2011, 83, 205429.
13. Hass, J.; Varchon, F.; Millan-Otoya, J. E.; Sprinkle, M.; Sharma, N.; de Heer, W. A.; Berger, C.; First, P. N.; Magaud, L.; Conrad, E. H. Why multilayer graphene on 4H-SiC(0001) behaves like a single sheet of graphene. Phys. Rev. Lett. 2008, 100, 125504.
14. Semond, F.; Soukiassian, P.; Mayne, A.; Dujardin, G.; Douillard, L.; Jaussaud, C. Atomic structure of the β-SiC(100)-(3×2) surface. Phys. Rev. Lett. 1996, 77, 2013-2016.
15. Soukiassian, P.; Semond, F.; Douillard, L.; Mayne, A.; Dujardin, G.; Pizzagalli, L.; Joachim, C. Direct observation of a β-SiC(100)-c(4×2) surface reconstruction. Phys. Rev. Lett. 1997, 78, 907-910.
16. Aristov, V. Y.; Douillard, L.; Fauchoux, O.; Soukiassian, P. Temperature-induced semiconducting c(4×2) ↔ metallic (2×1) reversible phase transition on the β-SiC(100) surface. Phys. Rev. Lett. 1997, 79, 3700-3703.
17. Derycke, V.; Soukiassian, P.; Mayne, A.; Dujardin, G. Scanning tunneling microscopy investigation of the C-terminated β-SiC(100) c(2×2) surface reconstruction: dimer orientation, defects and antiphase boundaries. Surf. Sci. 2000, 446, L101-L107.
18. Doillard, L.; Aristov, V. Y.; Semond, F.; Soukiassian, P. Pairs of Si atomic lines self-assembling on the β-SiC(100) surface: An 8×2 reconstruction. Surf. Sci. 1998, 401, L395-L400.
19. Hupalo, M.; Conrad, E. H.; Tringides, M. C. Growth mechanism for epitaxial graphene on vicinal 6H-SiC(0001) surfaces: A scanning tunneling microscopy study. Phys. Rev. B2009, 80, 041401(R).
20. Hass, J.; de Heer, W. A.; Conrad, E. H. The growth and morphology of epitaxial multilayer graphene. J. Phys.: Condens. Matter2008, 20, 323202.
21. Hibino, H.; Kageshima, H.; Maeda, F.; Nagase, M.; Kobayashi, Y.; Yamaguchi, H. Microscopic thickness determination of thin graphite films formed on SiC from quantized oscillation in reflectivity of low-energy electrons. Phys. Rev. B2008, 77, 075413.
22. Riedl, C.; Coletti, C.; Iwasaki, T.; Zakharov, A. A.; Starke, U. Quasi-free-standing epitaxial graphene on SiC obtained by hydrogen intercalation. Phys. Rev. Lett. 2009, 103, 246804.
23. Meyer, J. C.; Geim, A. K.; Katsnelson, M. I.; Novoselov, K. S.; Booth, T. J.; Roth, S. The structure of suspended graphene sheets. Nature2007, 446, 60-63.
24. Fasolino, A.; Los, J. H.; Katsnelson, M. I. Intrinsic ripples in graphene. Nat. Mater. 2007, 6, 858-861.
25. Mashoff, T.; Pratzer, M.; Geringer, V.; Echtermeyer, T. J.; Lemme, M. C.; Liebmann, M.; Morgenstern, M. Bistability and oscillatory motion of natural nanomembranes appearing within monolayer graphene on silicon dioxide. Nano Lett. 2010, 10, 461-465.
26. Horcas, I.; Fernandez, R.; Gomez-Rodriguez, J. M.; Colchero, J.; Gomez-Herrero, J.; Baro, A. M. WSxM: A software for scanning probe microscopy and a tool for nanotechnology. Rev. Sci. Instrum. 2007, 78, 013705.
27. Huang, P. Y.; Ruiz-Vargas, C. S.; van der Zande, A. M.; Whitney, W. S.; Levendorf, M. P.; Kevek, J. W.; Garg, S.; Alden, J. S.; Hustedt, C. J.; Zhu, Y.; et al. Grains and grain boundaries in single-layer graphene atomic patchwork quilts. Nature2011, 469, 389-392.
28. Tao, C.; Jiao, L.; Yazyev, O. V.; Chen, Y.-C.; Feng, J.; Zhang, X.; Capaz, R. B.; Tour, J. M.; Zettl, A.; Louie, S. G. et al. Spatially resolving edge states of chiral graphene nanoribbons. Nat. Phys. 2011, 7, 616-620.
29. Tapaszto, L.; Dobrik, G.; Lambin, P.; Biro, L. P. Tailoring the atomic structure of graphene nanoribbons by scanning tunnelling microscope lithography. Nat. Nanotechnol. 2008, 3, 397-401.
30. Gross, L.; Mohn, F.; Moll, N.; Schuler, B.; Criado, A.; Guitian, E.; Pena, D.; Gourdon, A.; Meyer, G. Bond-order discrimination by atomic force microscopy. Science2012, 337, 1326-1329.
31. Shirley, E. L.; Terminello, L. J.; Santoni, A.; Himpsel, F. J. Brillouin-zone-selection effects in graphite photoelectron angular distributions. Phys. Rev. B1995, 51, 13614-13622.