Growth mode and electric properties of graphene and graphitic phase grown by argon-propane assisted CVD on 3C-SiC/Si and 6H-SiC

Journal of Crystal Growth

Volumn 349, Issue 1, 2012, Pages 27-35

  Portail, M ^a   Michon, A ^a   Vezian S ^a   Lefebvre, D ^a   Chenot, S ^a   Roudon, E ^a   Zielinski, M ^b   Chassagne, T ^b   Tiberj, A ^c   Camassel, J ^c   Cordier, Y ^a  

^a CRHEA CNRS   (France)

^b SAVOIE TECHNOLAC   (France)

^c CNRS   (France)

Author keywords

A1. Nucleation; A1. Surface processes; A1. Surfaces; A3. Chemical vapor deposition processes; B2. Semiconducting silicon compounds

Indexed keywords

BULK SUBSTRATES; CHEMICAL VAPOR DEPOSITION PROCESS; COMPARATIVE ANALYSIS; DEPOSITION REGIMES; EXPERIMENTAL CONDITIONS; EXPERIMENTAL PARAMETERS; GRAPHITIC PHASE; GROWTH MODES; POTENTIAL VARIATIONS; PROCESS PRESSURE; PROCESS TIME; SURFACE CHEMICALS; SURFACE PROCESS; SURFACE UNIFORMITY;

CHEMICAL VAPOR DEPOSITION; EPITAXIAL GROWTH; GRAPHENE; GRAPHITE; GRAPHITIZATION; PROPANE; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE; VAPORS;

ELECTRIC PROPERTIES;

EID: 84860324004     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2012.04.004     Document Type: Article

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