Effect of the active layer thickness and temperature on the switching kinetics of ges2-based conductive bridge memories

Japanese Journal of Applied Physics

Volumn 52, Issue 4 PART 2, 2013, Pages

  Palma, Giorgio ^a   Vianello, Elisa ^a   Molas, Gabriel ^a   Cagli, Carlo ^a   Longnos, Florian ^b   Guy, Jeremy ^a   Reyboz, Marina ^a   Carabasse, Catherine ^a   Bernard, Mathieu ^a   Dahmani, Faiz ^b   Bretegnier, Damien ^b   Liebault, Jacques ^b   De Salvo, Barbara ^a  

^a CEA GRENOBLE   (France)

^b ALTIS Semiconductor   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE LAYER; COMBINED ANALYSIS; CONDUCTIVE FILAMENTS; CONDUCTIVE-BRIDGE MEMORY; ELECTRICAL CHARACTERIZATION; HIGH TEMPERATURE; RESISTANCE SWITCHING; SWITCHING KINETICS;

PHYSICAL PROPERTIES; PHYSICS;

SOLID STATE DEVICES;

EID: 84880800228     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.7567/JJAP.52.04CD02     Document Type: Conference Paper

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