Low-voltage onset of electroluminescence in nanocrystalline- Si/ SiO 2 multilayers

Journal of Applied Physics

Volumn 106, Issue 3, 2009, Pages

  Anopchenko, A ^a   Marconi, A ^a   Moser, E ^a   Prezioso, S ^a,c   Wang, M ^a,d   Pavesi, L ^a   Pucker, G ^b   Bellutti, P ^b  

^a UNIVERSITY OF TRENTO   (Italy)

^b FONDAZIONE BRUNO KESSLER   (Italy)

^c UNIVERSITY OF L'AQUILA   (Italy)

^d ZHEJIANG UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

BARRIER HEIGHTS; CURRENT INJECTIONS; DIRECT CURRENT; DIRECT TUNNELING; ELECTRICAL INJECTION; ELECTRONS AND HOLES; FOWLER-NORDHEIM TUNNELING; HIGH VOLTAGE; LIGHT EMITTING DEVICES; LOW-VOLTAGE; NANOCRYSTALLINES; NEW DIRECTIONS; POWER EFFICIENCY; ROOM TEMPERATURE; SILICON NANOCRYSTALS; SILICON-BASED; SILICON-OXIDE INTERFACES; THICK LAYERS; THIN FILM METAL; TIME-RESOLVED; TURN ON VOLTAGE;

DEPOSITION; ELECTRIC POTENTIAL; ELECTROLUMINESCENCE; ELECTRON TUBE DIODES; FILM PREPARATION; LIGHT; LIGHT EMISSION; NANOCRYSTALLINE SILICON; PLASMA DEPOSITION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICES; SILICON OXIDES; TUNNELING (EXCAVATION); WIND TUNNELS;

MULTILAYERS;

EID: 69149096259     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3194315     Document Type: Article

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