Charge trapping in Si-implanted SiO2-Si memory devices at high electric fields and elevated temperatures

Journal of Physics: Conference Series

Volumn 10, Issue 1, 2005, Pages 409-412

  Turchanikov, V I ^a   Nazarov, A N ^a   Lysenko, V S ^a   Carreras, J ^b   Garrido, B ^b  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Ukraine)

^b UNIVERSITY OF BARCELONA   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 22544440887     PISSN: 17426588     EISSN: 17426596     Source Type: Conference Proceeding    
DOI: 10.1088/1742-6596/10/1/100     Document Type: Article

References (4)

1. Turchanikov V I, Nazarov A N, Lysenko V S, Carreras J and Garrido B Microelectronics Reliability accepted for publication
2. Gonzalez-Varona O, Garrido B, Cheylan S, Perez-Rodrigues A, Cuadras A and Morante J R 2003 Appl. Phys. Lett. 82 2151-3
3. De Salvo B, Ghibaudo G, Pananakakis G, Masson P, Baron T, Buffet N, Fernandes A and Guillaumot B 2001 IEEE Trans. Electron. Dev. 48 1789-99
4. Garrido-Fernandez B, Lopez M, Garsia C, Perez-Rodriguez A, Morante J R, Bonafos C, Carrada M and Claverie A 2002 J. Appl. Phys. 91 798-807