Location of holes in silicon-rich oxide as memory states

Applied Physics Letters

Volumn 81, Issue 19, 2002, Pages 3591-3593

  Crupi, I ^a   Lombardo, S ^b   Rimini, E ^b   Gerardi, C ^c   Fazio, B ^c   Melanotte, M ^c  

^a UNIVERSITY OF CATANIA   (Italy)

^b CNR IMM   (Italy)

^c STMICROELECTRONICS   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

DYNAMIC RANDOM ACCESS MEMORY; FLAT-BAND VOLTAGE; LOGIC STATE; LOW FIELD; LOW MOBILITY; MEMORY CELL; MEMORY STATE; METAL OXIDE SEMICONDUCTOR; MOS STRUCTURE; REFRESH TIME; SILICON-RICH OXIDE; TWO-STATE;

DYNAMIC RANDOM ACCESS STORAGE; GATE DIELECTRICS; SEMICONDUCTOR STORAGE; SILICON COMPOUNDS; SILICON OXIDES;

SEMICONDUCTING SILICON;

EID: 79955984272     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1520340     Document Type: Article

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