Antireflection characteristics of inverted nanopyramid arrays fabricated by low-cost nanosphere lithography technology

Proceedings of the Institution of Mechanical Engineers, Part N: Journal of Nanoengineering and Nanosystems

Volumn 227, Issue 2, 2013, Pages 57-62

  Wang, Junfeng ^a,b   Dong, Peitao ^a,b   Di, Di ^a   Chen, Jian ^a   Wang, Chaoguang ^a   Wang, Haoxu ^a   Wu, Xuezhong ^a  

^a NATIONAL UNIVERSITY OF DEFENSE TECHNOLOGY   (China)

^b INSTITUTE OF GEOLOGY AND GEOPHYSICS   (China)

Author keywords

Antireflection; Finite difference time domain; Nanopyramid; Nanosphere lithography; Solar cell

Indexed keywords

ANTI-REFLECTION; ANTI-REFLECTION EFFECTS; CRYSTALLINE SILICON SOLAR CELLS; FINITE DIFFERENCE TIME DOMAINS; NANO SPHERE LITHOGRAPHY; NANOPYRAMID; NANOPYRAMID ARRAYS; NUMERICAL CALCULATION;

ANTIREFLECTION COATINGS; COMPUTER SIMULATION; FINITE DIFFERENCE TIME DOMAIN METHOD; LITHOGRAPHY; NANOSPHERES; SILICON SOLAR CELLS; SOLAR CELLS;

FABRICATION;

EID: 84880540403     PISSN: 17403499     EISSN: 20413092     Source Type: Journal    
DOI: 10.1177/1740349913480143     Document Type: Article

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