Surface texturing of single-crystalline silicon solar cells using low density SiO2 films as an anisotropic etch mask

Solar Energy Materials and Solar Cells

Volumn 94, Issue 12, 2010, Pages 2091-2093

  Kim, Jeehwan ^a   Inns, Daniel ^a   Fogel, Keith ^a   Sadana, Devendra K ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

Anisotropic etching; Inverted pyramid; Pyramid; Surface texturing; Thin film monocrystalline silicon

Indexed keywords

ANISOTROPIC ETCH; ANISOTROPIC WET CHEMICAL ETCHING; COMMONLY USED; ETCH MASK; ETCH PITS; INVERTED PYRAMID; LIGHT REFLECTANCE; LIGHT-TRAPPING; LOW DENSITY; LOW DEPOSITION TEMPERATURE; MINIMAL THICKNESS; PYRAMID; SILICON DIOXIDE LAYERS; SILICON WAFER SURFACE; SINGLE CRYSTALLINE SILICON; SURFACE REFLECTANCE; SURFACE TEXTURES; SURFACE TEXTURING;

ANISOTROPY; CRYSTALLINE MATERIALS; FILM THICKNESS; PHOTOLITHOGRAPHY; PLASMA DEPOSITION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; REFLECTION; SEMICONDUCTING SILICON COMPOUNDS; SILICA; SILICON OXIDES; SILICON SOLAR CELLS; SILICON WAFERS; SOLAR CELLS; THIN FILMS; VAPOR DEPOSITION; WET ETCHING;

ANISOTROPIC ETCHING;

EID: 77957661681     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2010.06.026     Document Type: Article

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