The properties of MOS structures using conjugated polymers as the semiconductor

Microelectronic Engineering

Volumn 59, Issue 1-4, 2001, Pages 323-328

  Lloyd, Giles ^a   Raja, Munira ^a   Sellers, Ian ^a   Sedghi, Naser ^a   Di Lucrezia, Raffaella ^a   Higgins, Simon ^a   Eccleston, Bill ^a  

^a UNIVERSITY OF LIVERPOOL   (United Kingdom)

Author keywords

Conjugated polymer; P3HT; Schottky barriers; TFTs

Indexed keywords

CARRIER MOBILITY; ELECTRIC CONTACTS; ELECTRONIC PROPERTIES; FRACTIONATION; ORGANIC POLYMERS; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR DOPING; THIN FILM TRANSISTORS;

BARRIER HEIGHTS; METAL CONTACTS;

MOS DEVICES;

EID: 0035498494     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(01)00617-7     Document Type: Conference Paper

References (7)