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Journal of Physics and Chemistry of Solids

Volumn 71, Issue 9, 2010, Pages 1398-1403

The effects of annealing on Au/pyronine-B/MD n-InP Schottky structure

(3) Soylu, M a Abay, B b Onganer, Y b

a University of Bingol (Turkey)

b ATATÜRK UNIVERSITY (Turkey)

Author keywords

A. Inorganic compounds; A. Organic compounds; D. Electrical properties; D. Thermal conductivity

Indexed keywords

A. INORGANIC COMPOUNDS; ANNEALING TEMPERATURES; BARRIER HEIGHTS; C-V CHARACTERISTIC; D. ELECTRICAL PROPERTIES; D. THERMAL CONDUCTIVITY; DIODE PARAMETERS; ELECTRICAL CHARACTERISTIC; ELECTRICAL PROPERTY; ELECTRONIC MODIFICATIONS; FORWARD BIAS; IDEALITY FACTORS; INP; INP SUBSTRATES; INTERFACIAL LAYER; IV CHARACTERISTICS; NON-POLYMERIC; ORDER OF MAGNITUDE; REVERSE BIAS LEAKAGE CURRENT; ROOM TEMPERATURE; SCHOTTKY BARRIER HEIGHTS; SCHOTTKY CONTACTS; SCHOTTKY DIODES; SCHOTTKY JUNCTIONS; SCHOTTKY STRUCTURES;

ANNEALING; DIODES; INORGANIC COMPOUNDS; ORGANIC COMPOUNDS; POLYMERIC FILMS; SCHOTTKY BARRIER DIODES; THERMAL CONDUCTIVITY; THERMOANALYSIS;

ELECTRIC PROPERTIES;

EID: 77955509448 PISSN: 00223697 EISSN: None Source Type: Journal
DOI: 10.1016/j.jpcs.2010.07.003 Document Type: Article

Times cited : (21)

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