Electrical and interface properties of Au/DNA/n-Si organic-on-inorganic structures

Microelectronic Engineering

Volumn 86, Issue 11, 2009, Pages 2305-2311

  Okur, Salih ^a   Yakuphanoglu, Fahrettin ^b   Ozsoz, Mehmet ^c   Kadayifcilar, Pinar Kara ^c  

^a IZMIR INSTITUTE OF TECHNOLOGY   (Turkey)

^b FIRAT UNIVERSITY   (Turkey)

^c EGE UNIVERSITY   (Turkey)

Author keywords

DNA; Ideality factor; Organic inorganic junction

Indexed keywords

ACETATE BUFFERS; BARRIER HEIGHTS; CONDUCTANCE TECHNIQUES; COVERAGE RATE; DNA FILMS; DNA LAYERS; ELECTRICAL PARAMETER; ELECTRICAL PROPERTY; ELECTRONIC PARAMETERS; IDEALITY FACTOR; IDEALITY FACTORS; INORGANIC STRUCTURE; INTERFACE PROPERTY; INTERFACE STATE DENSITY; N-SI WAFERS; ORGANIC/INORGANIC JUNCTION; SERIES RESISTANCES; THIN-FILM PROPERTIES;

ATOMIC FORCE MICROSCOPY; DNA; ELECTRIC PROPERTIES; GENES; NUCLEIC ACIDS; SILICON; SILICON WAFERS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 69549111056     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2009.04.017     Document Type: Article

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