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Volumn 87, Issue 4, 2010, Pages 648-651

Ultrahigh (100%) barrier modification of n-InP Schottky diode by DNA biopolymer nanofilms

Author keywords

Biopolymer; DNA; Ideality factor; InP; Schottky barrier

Indexed keywords

BARRIER HEIGHTS; ELECTRICAL CHARACTERISTIC; IDEALITY FACTORS; INP; METAL-SEMICONDUCTOR CONTACTS; NANO FILMS; RECTIFYING BEHAVIORS; SCHOTTKY BARRIER; SCHOTTKY BARRIERS; SCHOTTKY DIODES; SPACE CHARGE REGIONS;

EID: 75149196227     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2009.09.001     Document Type: Article
Times cited : (37)

References (41)
  • 11
    • 75149137083 scopus 로고    scopus 로고
    • J.S. Hwang, S.H. Hong, H.K. Kim, Y.W. Kwon, J.I. Jin, S.W. Hwang, D. Ahn, in: Extended Abstracts of the 2004 International Conference on Solid State Devices and Materials, Tokyo, 2004, p. 332.
    • J.S. Hwang, S.H. Hong, H.K. Kim, Y.W. Kwon, J.I. Jin, S.W. Hwang, D. Ahn, in: Extended Abstracts of the 2004 International Conference on Solid State Devices and Materials, Tokyo, 2004, p. 332.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.