Controlled assembly of graphene-capped nickel, cobalt and iron silicides

Scientific Reports

Volumn 3, Issue , 2013, Pages

  Vilkov, O ^a,b   Fedorov, A ^a,c   Usachov, D ^a   Yashina, L V ^d   Generalov, A V ^a,b   Borygina, K ^a   Verbitskiy, N I ^d,e   Gruneis A ^c,e   Vyalikh, D V ^a,b  

^a ST PETERSBURG STATE UNIVERSITY   (Russian Federation)

^b DRESDEN UNIVERSITY OF TECHNOLOGY   (Germany)

^c IFW DRESDEN   (Germany)

^d MOSCOW STATE UNIVERSITY   (Russian Federation)

^e UNIVERSITY OF VIENNA   (Austria)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84880279983     PISSN: None     EISSN: 20452322     Source Type: Journal    
DOI: 10.1038/srep02168     Document Type: Article

References (53)

1. Novoselov, K. S. et al. A roadmap for graphene. Nature 490, 192 (2012).
2. Levendorf, M. P., Ruiz-Vargas, C. S., Garg, S. & Park, J. Transfer-free batch fabrication of single layer graphene transistors. Nano Lett. 9, 4479 (2009).
3. Kim, K. S. et al. Large-scale pattern growth of graphene films for stretchable transparent electrodes. Nature 457, 706 (2009).
4. Hofrichter, J. et al. Synthesis of graphene on silicon dioxide by a solid carbon source. Nano Lett. 10, 36 (2010).
5. Wessely, P. J., Wessely, F., Birinci, E., Schwalke, U. & Riedinger, B. Transfer-free fabrication of graphene transistors. J. Vac. Sci. Technol. B 30, 03D114 (2012).
6. Zenasni, A., Delamoreanu, A. & Rabot, C. Free-suspended graphene synthesis via carbon diffusion through platinum-based metal. Appl. Phys. Lett. 100, 151907 (2012).
7. Meng, L. et al. Silicon intercalation at the interface of graphene and Ir(111). Appl. Phys. Lett. 100, 083101 (2012).
8. Mao, J. et al. Silicon layer intercalation of centimeter-scale, epitaxially grown monolayer graphene on Ru(0001). Appl. Phys. Lett. 100, 093101 (2012).
9. Cui, Y. et al. An exchange intercalation mechanism for the formation of a twodimensional Si structure underneath graphene. Nano Res. 5, 352 (2012).
10. Lizzit, S. et al. Transfer-free electrical insulation of epitaxial graphene from its metal substrate. Nano Lett. 12, 4503 (2012).
11. Eizenberg,M. & Blakely, J. M. Carbonmonolayer phase condensation on Ni(111). Surf. Sci. 82, 228 (1979).
12. Reina, A. et al. Large area, few-layer graphene films on arbitrary substrates by chemical vapor deposition. Nano Lett. 9, 30 (2009).
13. Grueis, A., Kummer, K. & Vyalikh, D. V. Dynamics of graphene growth on a metal surface: a time-dependent photoemission study. New J. Phys. 11, 073050 (2009).
14. Varykhalov, A. & Rader, O. Graphene grown on Co(0001) films and islands: Electronic structure and its precise magnetization dependence. Phys. Rev. B 80, 035437 (2009).
15. Vinogradov, N. A. et al. Formation and structure of graphene waves on Fe(110). Phys. Rev. Lett. 109, 026101 (2012).
16. Lin, Y.-C., Chen, Y. & Huang, Y. The growth and applications of silicides for nanoscale devices. Nanoscale 4, 1412 (2012).
17. Schmitt, A. L., Higgins, J. M., Szczech, J. R. & Jin, S. Synthesis and applications of metal silicide nanowires. J. Mater. Chem. 20, 223 (2010).
18. Lavoie, C., d'Heurle, F. M., Detavernier, C. & Cabral Jr., C. Towards implementation of a nickel silicide process forCMOStechnologies. Microelectron. Eng. 70, 44 (2003).
19. Kittl, J. A. et al. Silicides and germanides for nano-CMOS applications. Mater. Sci. Eng. B 154, 144 (2008).
20. Bhaskaran, M., Sriram, S. & Sim, L. W. Nickel silicide thin films as masking and structural layers for silicon bulk micro-machining by potassium hydroxide wet etching. J. Micromech. Microeng. 18, 095002 (2008).
21. Senthilarasu, S., Sathyamoorthy, R. & Lalitha, S. Synthesis and characterization of b-FeSi2 grown by thermal annealing of Fe/Si bilayers for photovoltaic applications. Sol. Energ. Mat. Sol. C. 82, 299 (2004).
22. Kim, J. & Anderson,W. A. Metal silicide-mediated microcrystalline silicon thinfilm growth for photovoltaics. Sol. Energ. Mat. Sol. C. 91, 534 (2007).
23. Zhou, F. et al. Determination of transport properties in chromium disilicide nanowires via combined thermoelectric and structural characterizations. Nano Lett. 7, 1649 (2007).
24. Chen, X., Wang, X., Xiu, J., Williams, C. T. & Liang, C. Synthesis and characterization of ferromagnetic nickel-cobalt silicide catalysts with good sulfur tolerance in hydrodesulfurization of dibenzothiophene. J. Phys. Chem. C 116, 24968 (2012).
25. Ko, F.-H., Yeh, Z.-H., Chen, C.-C. & Liu, T.-F. Self-aligned platinum-silicide nanowires for biomolecule sensing. J. Vac. Sci. Technol. B 23, 3000 (2005).
26. Kittl, J. et al. CMOS integration of dual work function phase-controlled Ni fully silicided gates (NMOS: NiSi, PMOS:Ni2Si, and Ni31Si12) onHfSiON. IEEE, Electr. Device L. 27, 966 (2006).
27. Kittl, J. A. et al. Kinetics of Ni3Si2 formation in the Ni2Si-NiSi thin film reaction from in situ measurements. Appl. Phys. Lett. 91, 232102 (2007).
28. Dasgupta, N. P. et al. Nickel silicide nanowire arrays for anti-reflective electrodes in photovoltaics. Adv. Funct. Mater. 22, 3650 (2012).
29. Fan, X., Zhang, H., Du, N. & Yang, D. Phase-controlled synthesis of nickel silicide nanostructures. Mater. Res. Bull. 47, 3797 (2012).
30. Seo, K. et al.Magnetic properties of single-crystalline CoSi nanowires. Nano Lett. 7, 1240 (2007).
31. Qu, Y. et al. Synthesis and electric properties of dicobalt silicide nanobelts. Chem. Commun. 11 47, 1255 (2011).
32. Girlanda, R., Piparo, E.& Balzarotti, A. Band structure and electronic properties of FeSi and a-FeSi2. J. Appl. Phys. 76, 2837 (1994).
33. Bost, M. C. & Mahan, J. E. Optical properties of semiconducting iron disilicide thin films. J. Appl. Phys. 58, 2696 (1985).
34. Pronin, I. et al. Magnetic ordering of the Fe/Si interface and its initial formation. J. Appl. Phys. 104, 104914 (2008).
35. Izumi, S., Shaban, M., Promros, N., Nomoto, K. & Yoshitake, T. Near-infrared photodetection of b-FeSi2/Si heterojunction photodiodes at low temperatures. Appl. Phys. Lett. 102, 032107 (2013).
36. Lenz, K. et al. Magnetic properties of Fe3Si/GaAs(001) hybrid structures. Phys. Rev. B 72, 144411 (2005).
37. Hafner, J.& Spisa, D. Structure and stability of the low-index surfaces of Fe3Si: Ab initio density functional investigations. Phys. Rev. B 75, 195411 (2007).
38. Tontegode, A. Ya. and Rut'kov, E. V. Intercalation by atoms of a two-dimensional graphite film on a metal. Phys.-Usp. 36, 1053 (1993).
39. Usachov, D. et al. Nitrogen-doped graphene: Efficient growth, structure, and electronic properties. Nano Lett. 11, 5401 (2011).
40. Cao, Y., Nyborg, L. & Jelvestam, U. XPS calibration study of thin-film nickel silicides. Surf. Interface Anal. 41, 471 (2009).
41. ASM handbook: Vol. 3: Alloys, Phase diagrams (ASM International, 1992).
42. Addou, R., Dahal, A. & Batzill, M. Graphene on ordered Ni-alloy surfaces formed by metal (Sn, Al) intercalation between graphene/Ni(111). Surf. Sci. 606, 1108 (2012).
43. Rybkina, A. A. et al. Interaction of graphene with intercalated Al: The process of intercalation and specific features of the electronic structure of the system. Surf. Sci. 609, 7 (2013).
44. Gaudet, S., Desjardins, P. & Lavoie, C. The thermally-induced reaction of thin Ni films with Si: Effect of the substrate orientation. J. Appl. Phys. 110, 113524 (2011).
45. Dedkov, Yu. S. & Fonin, M. Electronic and magnetic properties of the graphene-ferromagnet interface. New J. Phys. 12, 125004 (2010).
46. Rubloff, G. W. Microscopic properties and behavior of silicide interfaces. Surf. Sci. 132, 268 (1983).
47. Oshima, C. & Nagashima, A. Ultra-thin epitaxial films of graphite and hexagonal boron nitride on solid surfaces. J. Phys.: Condens. Matt. 9, 1 (1997).
48. Grueis, A. & Vyalikh, D. V. Tunable hybridization between electronic states of graphene and a metal surface. Phys. Rev. B 77, 193401 (2008).
49. Varykhalov, A. et al. Intact Dirac cones at broken sublattice symmetry: Photoemission study of graphene on Ni and Co. Phys. Rev. X 2, 041017 (2012).
50. Murch, G. E. Diffusion kinetics in solids, in Phase Transformations in Materials (Wiley-VCH Verlag GmbH & Co. KGaA, 2005) pp. 171-238.
51. Dedkov, Y. S., Fonin, M. & Laubschat, C. A possible source of spin-polarized electrons: The inert graphene/Ni(111) system. Appl. Phys. Lett. 92, 052506 (2008).
52. Dedkov, Y. S., Fonin, M., Ru?iger, U. & Laubschat, C. Graphene-protected iron layer on Ni(111). Appl. Phys. Lett. 93, 022509 (2008).
53. Marchenko, D., Varykhalov, A., Rybkin, A., Shikin, A. M. & Rader, O. Atmospheric stability and doping protection of noble-metal intercalated graphene on Ni(111). Appl. Phys. Lett. 98, 122111 (2011).