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Applied Physics Letters

Volumn 102, Issue 3, 2013, Pages

Near-infrared photodetection of β-FeSi2/Si heterojunction photodiodes at low temperatures

(5) Izumi, Shota a Shaban, Mahmoud b Promros, Nathaporn c Nomoto, Keita a Yoshitake, Tsuyoshi a

a KYUSHU UNIVERSITY (Japan)

b Aswan University ^* (Egypt)

c KING MONGKUT'S INSTITUTE OF TECHNOLOGY LADKRABANG (Thailand)

Author keywords

[No Author keywords available]

Indexed keywords

DIRECT-CURRENT SPUTTERING; HETEROJUNCTION PHOTODIODES; HIGH POTENTIAL; LOW TEMPERATURES; NEAR INFRARED; PHOTO DETECTION; RESPONSIVITY; SI TECHNOLOGY; SPECIFIC DETECTIVITY; TEMPERATURE RANGE;

DIODES; INFRARED DEVICES; PHOTODETECTORS; PHOTODIODES; SILICON;

HETEROJUNCTIONS;

EID: 84872956226 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.4789391 Document Type: Article

Times cited : (35)

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