The thermally-induced reaction of thin Ni films with Si: Effect of the substrate orientation

Journal of Applied Physics

Volumn 110, Issue 11, 2011, Pages

  Gaudet, S ^a   Desjardins, P ^a   Lavoie, C ^b  

^a ÉCOLE POLYTECHNIQUE DE MONTRÉAL   (Canada)

^b IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINE SI; EX SITU; FORMATION TEMPERATURE; HEXAGONAL PHASE; IN-SITU SYNCHROTRONS; INTERFACIAL LAYER; NI FILMS; NUCLEATION AND GROWTH; PHASE FORMATION SEQUENCE; REACTION PATHWAYS; RECIPROCAL SPACE MAPS; SI (1 1 1); SI SUBSTRATES; SI(0 0 1); STRONG FIBERS; SUBSTRATE ORIENTATION; TEXTURE INHERITANCE; TRANSMISSION ELECTRON MICROSCOPY (TEM);

EPITAXIAL GROWTH; SOLID STATE REACTIONS; SUBSTRATES; TEXTURES; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

SILICON;

EID: 84859363010     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3662110     Document Type: Article

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