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Volumn 100, Issue 8, 2012, Pages

Silicon intercalation at the interface of graphene and Ir(111)

Author keywords

[No Author keywords available]

Indexed keywords

IR(111); VIBRATIONAL STATE;

EID: 84863281657     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3687688     Document Type: Article
Times cited : (70)

References (27)
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  • 3
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    • Tombros, N.1    Jozsa, C.2    Popinciuc, M.3    Jonkman, H.T.4    Van Wees, B.J.5
  • 5
    • 42049094251 scopus 로고    scopus 로고
    • Gate-variable optical transitions in graphene
    • DOI 10.1126/science.1152793
    • F. Wang, Y. B. Zhang, C. S. Tian, C. Girit, A. Zettl, M. Crommie, and Y. R. Shen, Science 320, 206 (2008). 10.1126/science.1152793 (Pubitemid 351521411)
    • (2008) Science , vol.320 , Issue.5873 , pp. 206-209
    • Wang, F.1    Zhang, Y.2    Tian, C.3    Girit, C.4    Zettl, A.5    Crommie, M.6    Shen, Y.R.7
  • 6
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    • Rashba effect in the graphene/Ni(111) system
    • DOI 10.1103/PhysRevLett.100.107602
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  • 7
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    • Formation of graphene on Ru(0001) surface
    • DOI 10.1088/1009-1963/16/11/001
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    • Pan, Y.1    Shi, D.-X.2    Gao, H.-J.3
  • 19
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    • Silicon layer intercalation of centimeter-scale, epitaxially grown monolayer graphene on Ru(0001)
    • (to be published) 10.1063/1.3687190.
    • J. Mao, L. Huang, Y. Pan, M. Gao, J. He, H. Zhou, H. Guo, Y. Tian, Q. Zou, L. Zhang, Silicon layer intercalation of centimeter-scale, epitaxially grown monolayer graphene on Ru(0001)., Appl. Phys. Lett. (to be published) 10.1063/1.3687190.
    • Appl. Phys. Lett.
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.