Kinetics of Ni3Si2 formation in the Ni 2Si-NiSi thin film reaction from in situ measurements

Applied Physics Letters

Volumn 91, Issue 23, 2007, Pages

  Kittl, J A ^a   Pawlak, M A ^a   Torregiani, C ^a   Lauwers, A ^a   Demeurisse, C ^a   Vrancken, C ^a   Absil, P P ^a   Biesemans, S ^a   Detavernier, C ^b   Jordan Sweet, J ^c   Lavoie, C ^c  

^a IMEC   (Belgium)

^b GHENT UNIVERSITY   (Belgium)

^c IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; NUCLEATION; SILICON; THIN FILMS; X RAY DIFFRACTION;

SHEET RESISTANCE MEASUREMENTS; SYNCHROTRON SOURCE; TWO-DIMENSIONAL GROWTH;

REACTION KINETICS;

EID: 36849032793     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2822411     Document Type: Article

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