CMOS integration of dual work function phase-controlled Ni fully silicided gates (NMOS:NiSi, PMOS:Ni2Si, and Ni31 Si12 on HfSiON

IEEE Electron Device Letters

Volumn 27, Issue 12, 2006, Pages 966-968

  Kittl, J A ^a   Lauwers, A ^a   Veloso, A ^a   Hoffmann, T ^a   Kubicek, S ^a   Niwa, M ^a   van Dal, M J H ^b   Pawlak, M A ^a   Brus, S ^a   Demeurisse, C ^a   Vrancken, C ^a   Absil, P ^a   Biesemans, S ^a  

^a IMEC   (Belgium)

^b PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

CMOS; Dual work function (WF) metal gates; Full silicidation; Fully silicided (FUSI); HfSiON; High dielectric; Ni2Si; Ni31Si12; NiSi

Indexed keywords

ETCHING; GATES (TRANSISTOR); RAPID THERMAL PROCESSING; SEMICONDUCTING SILICON COMPOUNDS; THRESHOLD VOLTAGE;

DUAL WORK FUNCTION (WF) METAL GATES; FULL SILICIDATION; FULLY SILICIDED (FUSI) GATES; SILICIDATION PROCESS;

CMOS INTEGRATED CIRCUITS;

EID: 33846440636     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2006.886414     Document Type: Article

References (10)

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