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Electrochemical and Solid-State Letters

Volumn 15, Issue 3, 2012, Pages

GaSb metal-oxide-semiconductor capacitors with atomic-layer-deposited HfAlO as gate dielectric

(5) Wang, Chen a,b Xu, Min b Gu, Jiangjiang b Zhang, David Wei a Ye, Peide D b

a FUDAN UNIVERSITY (China)

b PURDUE UNIVERSITY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITED; BARRIER HEIGHTS; BORDER TRAPS; BREAKDOWN STRENGTHS; CAPACITANCE MODULATION; CONDUCTANCE METHOD; FREQUENCY DISPERSION; INTERFACE CHARACTERIZATION; INTERFACE TRAP DENSITY; METAL OXIDE SEMICONDUCTOR STRUCTURES; METAL-OXIDE-SEMICONDUCTOR CAPACITORS; P-TYPE; TEMPERATURE DEPENDENT; VALENCE BAND EDGES;

ALUMINUM; ATOMIC LAYER DEPOSITION; DIELECTRIC DEVICES; DIELECTRIC MATERIALS; GALLIUM ALLOYS; HAFNIUM; MOS CAPACITORS;

GATE DIELECTRICS;

EID: 84862970420 PISSN: 10990062 EISSN: None Source Type: Journal
DOI: 10.1149/2.001203esl Document Type: Article

Times cited : (31)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.