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Journal of Physics D: Applied Physics

Volumn 46, Issue 29, 2013, Pages

The effect of Nb doping on the performance and stability of TiOx devices

(4) Ok, Kyung Chul a Park, Yoseb a Chung, Kwun Bum b Park, Jin Seong a

a Hanyang University (South Korea)

b Dankook University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS STRUCTURES; ANNEALING TEMPERATURES; CRYSTALLINE-TIO; DEVICE STABILITY; EFFECT OF NIOBIUM; FIELD-EFFECT MOBILITIES; OXYGEN DEFICIENCY; THIN-FILM TRANSISTOR (TFTS);

GRAIN BOUNDARIES; PHOTOELECTRONS; X RAY PHOTOELECTRON SPECTROSCOPY;

STABILITY;

EID: 84879914520 PISSN: 00223727 EISSN: 13616463 Source Type: Journal
DOI: 10.1088/0022-3727/46/29/295102 Document Type: Article

Times cited : (6)

References (24)

1
- 9744248669
- Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
- DOI 10.1038/nature03090
- Nomura K, Ohta H, Takagi A, Kamiya T, Hirano M and Hosono H 2004 Nature 432 488 (Pubitemid 39585210)
- (2004) Nature , vol.432 , Issue.7016 , pp. 488-492
- Nomura, K.¹ Ohta, H.² Takagi, A.³ Kamiya, T.⁴ Hirano, M.⁵ Hosono, H.⁶

2
- 78149439156
- 10.1038/asiamat.2010.5 1884-4049
- Kamiya T and Hosono H 2010 NPG Asia Mater. 2 15
- (2010) NPG Asia Mater. , vol.2 , Issue.1 , pp. 15
- Kamiya, T.¹ Hosono, H.²

3
- 24344495384
- 2
- DOI 10.1063/1.1949728, 252101
- Furubayashi Y, Hitosugi T, Yamamoto Y, Inaba K, Kinoda G, Hirose Y, Shimada T and Hasegawa T 2005 Appl. Phys. Lett. 86 252101 (Pubitemid 41244066)
- (2005) Applied Physics Letters , vol.86 , Issue.25 , pp. 1-3
- Furubayashi, Y.¹ Hitosugi, T.² Yamamoto, Y.³ Inaba, K.⁴ Kinoda, G.⁵ Hirose, Y.⁶ Shimada, T.⁷ Hasegawa, T.⁸

4
- 57649093205
- 10.1143/APEX.1.115001 1882-0778 115001
- Hoang N L H, Yamada N, Hitosugi T, Kasai J, Nakao S, Shimada T and Hasegawa T 2008 Appl. Phys. Express 1 115001
- (2008) Appl. Phys. Express , vol.1
- Hoang, N.L.H.¹ Yamada, N.² Hitosugi, T.³ Kasai, J.⁴ Nakao, S.⁵ Shimada, T.⁶ Hasegawa, T.⁷

5
- 77649135407
- 10.1016/j.tsf.2009.07.205 0040-6090
- Yamada N, Hitosugi T, Kasai j, Hoang N L H, Nakao S, Hirose Y, Shimada T and Hasegawa T 2010 Thin Solid Films 518 3101
- (2010) Thin Solid Films , vol.518 , Issue.11 , pp. 3101
- Yamada, N.¹ Hitosugi, T.² Kasai, J.³ Hoang, N.L.H.⁴ Nakao, S.⁵ Hirose, Y.⁶ Shimada, T.⁷ Hasegawa, T.⁸

6
- 0033284287
- 2 thin films based on variable-angle spectroscopic ellipsometry measurements
- DOI 10.1016/S0921-5107(99)00335-9
- Mardare D and Hones P 1999 Mater. Sci. Eng. B 68 42 (Pubitemid 32083264)
- (1999) Materials Science and Engineering B: Solid-State Materials for Advanced Technology , vol.68 , Issue.1 , pp. 42-47
- Mardare, D.¹ Hones, P.²

7
- 0033148538
- 10.1016/S0040-6090(98)01431-X 0040-6090
- Gao Y 1999 Thin Solid Films 346 73
- (1999) Thin Solid Films , vol.346 , Issue.1-2 , pp. 73
- Gao, Y.¹

8
- 0024091105
- 10.1143/JJAP.27.1798 0021-4922
- Matsushima S, Teraoka Y, Miura N and Yamazoe N 1988 Japan. J. Appl. Phys. 27 1798
- (1988) Japan. J. Appl. Phys. , vol.27 , Issue.PART 1 , pp. 1798
- Matsushima, S.¹ Teraoka, Y.² Miura, N.³ Yamazoe, N.⁴

9
- 0028368703
- 10.1063/1.356306 0021-8979
- Tang H, Prasad K, Sanjines R, Schmid P E and Lévi F 1994 J. Appl. Phys. 75 2042
- (1994) J. Appl. Phys. , vol.75 , Issue.4 , pp. 2042
- Tang, H.¹ Prasad, K.² Sanjines, R.³ Schmid, P.E.⁴ Lévi, F.⁵

10
- 67349099474
- 10.1016/j.jallcom.2009.02.100 0925-8388
- Zhang Y, Ma X, Chen O and Yang D 2009 J Alloys Compounds. 480 938
- (2009) J Alloys Compounds. , vol.480 , Issue.2 , pp. 938
- Zhang, Y.¹ Ma, X.² Chen, O.³ Yang, D.⁴

11
- 80053936796
- 10.1063/1.3646105 0003-6951 142104
- Park J, Ok K-C, Ahn B D, Lee J H, Park J-W, Chung K-B and Park J-S 2011 Appl. Phys. Lett. 99 142104
- (2011) Appl. Phys. Lett. , vol.99 , Issue.14
- Park, J.¹ Ok, K.-C.² Ahn, B.D.³ Lee, J.H.⁴ Park, J.-W.⁵ Chung, K.-B.⁶ Park, J.-S.⁷

12
- 0038243548
- 10.1016/S0168-583X(03)00740-7 0168-583X B
- Umebayashi T, Yamaki T, Sumita T, Yamamoto S, Tanaka S and Asai K 2003 Nucl. Instrum. Methods B 206 264
- (2003) Nucl. Instrum. Methods , vol.206 , pp. 264
- Umebayashi, T.¹ Yamaki, T.² Sumita, T.³ Yamamoto, S.⁴ Tanaka, S.⁵ Asai, K.⁶

13
- 79952735854
- 10.1016/j.tsf.2011.01.264 0040-6090
- DeSario P A, Graham M E, Gelfand R M and Grav K A 2011 Thin Solid Films 519 3562
- (2011) Thin Solid Films , vol.519 , Issue.11 , pp. 3562
- Desario, P.A.¹ Graham, M.E.² Gelfand, R.M.³ Grav, K.A.⁴

14
- 84863688758
- 10.1002/aenm.201100494 1614-6832
- Kim J W, Augustyn V and Dunn B 2012 Adv. Energy Mater. 2 141
- (2012) Adv. Energy Mater. , vol.2 , Issue.1 , pp. 141
- Kim, J.W.¹ Augustyn, V.² Dunn, B.³

15
- 0030219381
- Characterization of niobium oxide electrochromic thin films prepared by reactive d.c. magnetron sputtering
- DOI 10.1016/0040-6090(96)08640-3
- Yoshimura K, Miki T, Iwama S and Tanemura S 1996 Thin Solid Films 281-282 235 (Pubitemid 126388081)
- (1996) Thin Solid Films , vol.281-282 , Issue.1-2 , pp. 235-238
- Yoshimura, K.¹ Miki, T.² Iwama, S.³ Tanemura, S.⁴

16
- 84859786749
- 10.1063/1.3698389 0003-6951 142103
- Ok K-C, Park J, Lee J H, Ahn B D, Lee J H, Chung K-B and Park J-S 2012 Appl. Phys. Lett. 100 142103
- (2012) Appl. Phys. Lett. , vol.100 , Issue.14
- Ok, K.-C.¹ Park, J.² Lee, J.H.³ Ahn, B.D.⁴ Lee, J.H.⁵ Chung, K.-B.⁶ Park, J.-S.⁷

17
- 38549145327
- Bias stress stability of indium gallium zinc oxide channel based transparent thin film transistors
- DOI 10.1063/1.2824758
- Suresh A and Muth J F 2008 Appl. Phys. Lett. 92 033502 (Pubitemid 351160654)
- (2008) Applied Physics Letters , vol.92 , Issue.3 , pp. 033502
- Suresh, A.¹ Muth, J.F.²

18
- 51349141239
- 10.1063/1.2977865 0003-6951 093504
- Lee J-M, Cho I-T, Lee J-H and Kwon H-I 2008 Appl. Phys. Lett. 93 093504
- (2008) Appl. Phys. Lett. , vol.93 , Issue.9
- Lee, J.-M.¹ Cho, I.-T.² Lee, J.-H.³ Kwon, H.-I.⁴

19
- 61349167819
- 10.4218/etrij.09.0208.0266 1225-6463
- Shin J-H, Lee J-S, Hwang C-S, Park S-H K, Cheong W-S, Ryu M, Byun C-W, Lee J-I and Chu H Y 2009 ETRI J. 31 62
- (2009) ETRI J. , vol.31 , Issue.1 , pp. 62
- Shin, J.-H.¹ Lee, J.-S.² Hwang, C.-S.³ Park, S.-H.K.⁴ Cheong, W.-S.⁵ Ryu, M.⁶ Byun, C.-W.⁷ Lee, J.-I.⁸ Chu, H.Y.⁹

20
- 78649300313
- 10.1063/1.3510471 0003-6951 183502
- Oh H, Yoon S-M, Ryu M K, Hwang C-S, Yang S and Park S-H K 2010 Appl. Phys. Lett. 97 183502
- (2010) Appl. Phys. Lett. , vol.97 , Issue.18
- Oh, H.¹ Yoon, S.-M.² Ryu, M.K.³ Hwang, C.-S.⁴ Yang, S.⁵ Park, S.-H.K.⁶

21
- 77956853370
- 10.1063/1.3480547 0003-6951 113504
- Ghaffarzadeh K, Nathan A, Robertson J, Kim S, Jeon S, Kim C, Chung U-I and Lee J-H 2010 Appl. Phys. Lett. 97 113504
- (2010) Appl. Phys. Lett. , vol.97 , Issue.11
- Ghaffarzadeh, K.¹ Nathan, A.² Robertson, J.³ Kim, S.⁴ Jeon, S.⁵ Kim, C.⁶ Chung, U.-I.⁷ Lee, J.-H.⁸

22
- 0001152868
- 10.1063/1.352836 0021-8979
- Dimitriadis C A 1993 J. Appl. Phys. 73 4086
- (1993) J. Appl. Phys. , vol.73 , Issue.8 , pp. 4086
- Dimitriadis, C.A.¹

23
- 3042653985
- 10.1063/1.358430 0021-8979
- Maeda S, Maegawa S, Ipposhi T, Nishimura H, Ichiki T, Mitsuhashi J, Ashida M, Muragishi T, Inoue Y and Nishimura T 1994 J. Appl. Phys. 76 8160
- (1994) J. Appl. Phys. , vol.76 , Issue.12 , pp. 8160
- Maeda, S.¹ Maegawa, S.² Ipposhi, T.³ Nishimura, H.⁴ Ichiki, T.⁵ Mitsuhashi, J.⁶ Ashida, M.⁷ Muragishi, T.⁸ Inoue, Y.⁹ Nishimura, T.¹⁰

24
- 33947281578
- Negative bias temperature instability in low-temperature polycrystalline silicon thin-film transistors
- DOI 10.1109/TED.2006.885543
- Chen C-Y, Lee J-W, Wang S-D, Shieh M-S, Lee P-H, Chen W-C, Lin H-Y, Yeh K-L and Lei T-F 2006 IEEE Trans. Electron Devices 53 2993 (Pubitemid 46417112)
- (2006) IEEE Transactions on Electron Devices , vol.53 , Issue.12 , pp. 2993-2999
- Chen, C.-Y.¹ Lee, J.-W.² Wang, S.-D.³ Shieh, M.-S.⁴ Lee, P.-H.⁵ Chen, W.-G.⁶ Lin, H.-Y.⁷ Yeh, K.-L.⁸ Lei, T.-F.⁹

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.