Semiconducting behavior of niobium-doped titanium oxide in the amorphous state

Applied Physics Letters

Volumn 100, Issue 14, 2012, Pages

  Ok, Kyung Chul ^a   Park, Joseph ^a   Lee, Ju Ho ^b   Ahn, Byung Du ^c   Lee, Je Hun ^c   Chung, Kwun Bum ^a   Park, Jin Seong ^a  

^a Dankook University   (South Korea)

^b Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^c SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS PHASE; AMORPHOUS STATE; ANNEALING TEMPERATURES; CRYSTAL-FIELD SPLITTING; FIELD-EFFECT MOBILITIES; FREE ELECTRON; ORBITAL ORDERING; OXYGEN DEFICIENT; SEMICONDUCTING BEHAVIOR; X-RAY PHOTOELECTRON SPECTROSCOPY STUDIES;

ELECTRIC PROPERTIES; MOLECULAR ORBITALS; NIOBIUM; NIOBIUM OXIDE; OXIDE FILMS; PHOTOELECTRONS; THIN FILM TRANSISTORS; TITANIUM; X RAY ABSORPTION SPECTROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

TITANIUM OXIDES;

EID: 84859786749     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3698389     Document Type: Article

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