-
1
-
-
9744248669
-
Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
-
DOI 10.1038/nature03090
-
K. Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hirano, and H. Hosono, Nature 432, 488 (2004). 10.1038/nature03090 (Pubitemid 39585210)
-
(2004)
Nature
, vol.432
, Issue.7016
, pp. 488-492
-
-
Nomura, K.1
Ohta, H.2
Takagi, A.3
Kamiya, T.4
Hirano, M.5
Hosono, H.6
-
2
-
-
20644459026
-
Transparent thin-film transistors with zinc indium oxide channel layer
-
DOI 10.1063/1.1862767, 064505
-
N. L. Dehuff, E. S. Kettenring, D. Hong, H. Q. Chiang, J. F. Wager, R. L. Hoffman, C.-H. Park, and D. A. Keszler, J. Appl. Phys. 97, 064505 (2005). 10.1063/1.1862767 (Pubitemid 40833716)
-
(2005)
Journal of Applied Physics
, vol.97
, Issue.6
, pp. 1-5
-
-
Dehuff, N.L.1
Kettenring, E.S.2
Hong, D.3
Chiang, H.Q.4
Wager, J.F.5
Hoffman, R.L.6
Park, C.-H.7
Keszler, D.A.8
-
3
-
-
36049015883
-
The influence of visible light on transparent zinc tin oxide thin film transistors
-
DOI 10.1063/1.2806934
-
P. Grrn, M. Lehnhardt, T. Riedl, and W. Kowalsky, Appl. Phys. Lett. 91, 193504 (2007). 10.1063/1.2806934 (Pubitemid 350097924)
-
(2007)
Applied Physics Letters
, vol.91
, Issue.19
, pp. 193504
-
-
Gorrn, P.1
Lehnhardt, M.2
Riedl, T.3
Kowalsky, W.4
-
4
-
-
33845737470
-
2
-
DOI 10.1063/1.2404980
-
M. Katayama, S. Ikesaka, J. Kuwano, Y. Yamamoto, H. Koinuma, and Y. Matsumoto, Appl. Phys. Lett. 89, 242103 (2006). 10.1063/1.2404980 (Pubitemid 44974923)
-
(2006)
Applied Physics Letters
, vol.89
, Issue.24
, pp. 242103
-
-
Katayama, M.1
Ikesaka, S.2
Kuwano, J.3
Yamamoto, Y.4
Koinuma, H.5
Matsumoto, Y.6
-
6
-
-
57049090509
-
-
10.1109/LED.2008.2005737
-
J.-W. Park, S.-W. Han, N. Jeon, J. Jang, and S. Yoo, IEEE Electron Device Lett. 29, 1319 (2008). 10.1109/LED.2008.2005737
-
(2008)
IEEE Electron Device Lett.
, vol.29
, pp. 1319
-
-
Park, J.-W.1
Han, S.-W.2
Jeon, N.3
Jang, J.4
Yoo, S.5
-
7
-
-
67650455887
-
-
10.1109/LED.2009.2021587
-
J.-W. Park, D. Lee, H. Kwon, and S. Yoo, IEEE Electron Device Lett. 30, 739 (2009). 10.1109/LED.2009.2021587
-
(2009)
IEEE Electron Device Lett.
, vol.30
, pp. 739
-
-
Park, J.-W.1
Lee, D.2
Kwon, H.3
Yoo, S.4
-
8
-
-
77749297976
-
-
10.1063/1.3330944
-
P. H. Wbkenberg, T. Ishwara, J. Nelson, D. D. C. Bradley, S. A. Haque, and T. Anthopoulos, Appl. Phys. Lett. 96, 082116 (2010). 10.1063/1.3330944
-
(2010)
Appl. Phys. Lett.
, vol.96
, pp. 082116
-
-
Wbkenberg, P.H.1
Ishwara, T.2
Nelson, J.3
Bradley, D.D.C.4
Haque, S.A.5
Anthopoulos, T.6
-
10
-
-
33845737470
-
2
-
DOI 10.1063/1.2404980
-
M. Katayama, S. Ikesaka, J. Kuwano, Y. Yamamoto, H. Koinuma, and Y. Matsumoto, Appl. Phys. Lett. 89, 242103 (2006). 10.1063/1.2404980 (Pubitemid 44974923)
-
(2006)
Applied Physics Letters
, vol.89
, Issue.24
, pp. 242103
-
-
Katayama, M.1
Ikesaka, S.2
Kuwano, J.3
Yamamoto, Y.4
Koinuma, H.5
Matsumoto, Y.6
-
11
-
-
33748279455
-
Intrinsic characteristics of semiconducting oxide nanobelt field-effect transistors
-
DOI 10.1063/1.2338754
-
Y. Cheng, P. Xiong, L. Fields, J. P. Zheng, R. S. Yang, and Z. L. Wang, Appl. Phys. Lett. 89, 093114 (2006). 10.1063/1.2338754 (Pubitemid 44319987)
-
(2006)
Applied Physics Letters
, vol.89
, Issue.9
, pp. 093114
-
-
Cheng, Y.1
Xiong, P.2
Fields, L.3
Zheng, J.P.4
Yang, R.S.5
Wang, Z.L.6
-
12
-
-
38349143370
-
-
10.1063/1.2830940
-
N. Huby, S. Ferrari, E. Guziewicz, M. Godlewski, and V. Osinniy, Appl. Phys. Lett. 92, 023502 (2008). 10.1063/1.2830940
-
(2008)
Appl. Phys. Lett.
, vol.92
, pp. 023502
-
-
Huby, N.1
Ferrari, S.2
Guziewicz, E.3
Godlewski, M.4
Osinniy, V.5
-
13
-
-
57649108150
-
-
10.1143/APEX.1.111203
-
T. Hitosugi, H. Kamisaka, K. Yamashita, H. Nogawa, Y. Furubayashi, S. Nakao, N. Yamada, A. Chikamatsu, H. Kumigashira, M. Oshima, Y. Hirose, T. Shimada, and T. Hasegawa, Appl. Phys. Express 1, 111203 (2008). 10.1143/APEX.1.111203
-
(2008)
Appl. Phys. Express
, vol.1
, pp. 111203
-
-
Hitosugi, T.1
Kamisaka, H.2
Yamashita, K.3
Nogawa, H.4
Furubayashi, Y.5
Nakao, S.6
Yamada, N.7
Chikamatsu, A.8
Kumigashira, H.9
Oshima, M.10
Hirose, Y.11
Shimada, T.12
Hasegawa, T.13
-
14
-
-
70350093763
-
-
10.1063/1.3236679
-
K. B. Chung, J. P. Long, H. Seo, G. Lucovsky, and D. Nordlung, J. Appl. Phys. 106, 074102 (2009). 10.1063/1.3236679
-
(2009)
J. Appl. Phys.
, vol.106
, pp. 074102
-
-
Chung, K.B.1
Long, J.P.2
Seo, H.3
Lucovsky, G.4
Nordlung, D.5
-
16
-
-
33646642931
-
-
10.1103/PhysRevB.40.5715
-
F. M. F. de Groot, M. Grioni, J. C. Fuggle, J. Ghijsen, G. A. Sawatsky, and H. Petersen, Phys. Rev. B 40, 5715 (1989). 10.1103/PhysRevB.40.5715
-
(1989)
Phys. Rev. B
, vol.40
, pp. 5715
-
-
De Groot, F.M.F.1
Grioni, M.2
Fuggle, J.C.3
Ghijsen, J.4
Sawatsky, G.A.5
Petersen, H.6
-
17
-
-
34248550154
-
2
-
DOI 10.1063/1.2721748
-
Y. Furubayashi, N. Yamada, Y. Hirose, Y. Yamamoyo, and M. Otani, J. Appl. Phys. 101, 093705 (2007). 10.1063/1.2721748 (Pubitemid 46753068)
-
(2007)
Journal of Applied Physics
, vol.101
, Issue.9
, pp. 093705
-
-
Furubayashi, Y.1
Yamada, N.2
Hirose, Y.3
Yamamoto, Y.4
Otani, M.5
Hitosugi, T.6
Shimada, T.7
Hasegawa, T.8
-
18
-
-
51349141239
-
-
10.1063/1.2977865
-
J. M. Lee, I.-T. Cho, J.-H. Lee, and H.-I. Kwon, Appl. Phys. Lett. 93, 093504 (2008). 10.1063/1.2977865
-
(2008)
Appl. Phys. Lett.
, vol.93
, pp. 093504
-
-
Lee, J.M.1
Cho, I.-T.2
Lee, J.-H.3
Kwon, H.-I.4
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