Performance enhancement in p-channel charge-trapping flash memory devices with Si/Ge super-lattice channel and band-to-band tunneling induced hot-electron injection

Thin Solid Films

Volumn 533, Issue , 2013, Pages 1-4

  Liu, Li Jung ^a   Chang Liao, Kuei Shu ^a   Jian, Yi Chuen ^a   Wang, Tien Ko ^a   Tsai, Ming Jinn ^b  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^b INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

Author keywords

Atomic layer deposition (ALD); Charge trapping flash memory; High ; SiGe channel; Super lattice channel

Indexed keywords

BAND TO BAND TUNNELING; CHARGE-TRAPPING FLASHES; MEMORY WINDOW; PERFORMANCE ENHANCEMENTS; RELIABILITY PROPERTIES; SIGE CHANNELS; SUPER-LATTICE CHANNEL; SUPER-LATTICE STRUCTURES;

ATOMIC LAYER DEPOSITION; GERMANIUM; SILICON ALLOYS;

FLASH MEMORY;

EID: 84879884624     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2012.11.115     Document Type: Conference Paper

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