Enhanced hole mobility and low Tinv for pMOSFET by a novel epitaxial Si/Ge superlattice channel

IEEE Electron Device Letters

Volumn 33, Issue 2, 2012, Pages 188-190

  Fu, Chung Hao ^a   Chang Liao, Kuei Shu ^a   Liu, Li Jung ^a   Hsieh, Hsiao Chi ^a   Lu, Chun Chang ^a   Li, Chen Chien ^a   Wang, Tien Ko ^a   Heh, Da Wei ^b  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^b NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

Author keywords

Ge MOS; mobility; superlattice (SL) channel

Indexed keywords

ACTIVATION TEMPERATURES; CHANNEL MATERIALS; ELECTRICAL CHARACTERISTIC; ELECTRICAL THICKNESS; EPITAXIAL SI; MOS-FET; ON-OFF RATIO; PMOS FET DEVICES; PMOSFET; SIGE CHANNELS; ULTRA-THIN; VIRTUAL SUBSTRATES;

CARRIER MOBILITY; GATE DIELECTRICS; GERMANIUM; MOSFET DEVICES; SILICON ALLOYS; SUPERLATTICES;

HOLE MOBILITY;

EID: 84856294367     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2011.2177490     Document Type: Article

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