A novel method to separately investigate program and erase degradation mechanisms in flash memory cells

IEEE Transactions on Electron Devices

Volumn 48, Issue 12, 2001, Pages 2947-2951

  Tseng, Jermyn M Z ^a   Larsen, Bradley J ^a   Xiao, Yang ^a   Erickson, Donald A ^a  

^a ATMEL CORPORATION   (United States)

Author keywords

Endurance cycling; Flash memory; Hot carrier injection

Indexed keywords

CAPACITORS; COMPUTER SOFTWARE; ELECTRIC POTENTIAL; GATES (TRANSISTOR); HOT CARRIERS; INTERFACES (COMPUTER);

CHARGE DENSITY; ERASE DEGRADATION MECHANISMS;

FLASH MEMORY;

EID: 0035691588     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.974734     Document Type: Article

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