Enhanced band-to-band-tunneling-induced hot-electron injection in p-channel flash by band-gap offset modification

IEEE Electron Device Letters

Volumn 27, Issue 9, 2006, Pages 749-751

  Wang, Chi Chao ^a   Chang Liao, Kuei Shu ^a   Lu, Chun Yuan ^a   Wang, Tien Ko ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

Band to band tunneling induced hot electron (BBHE); High programming speed; Low voltage operation; p channel flash; SiGe

Indexed keywords

BAND STRUCTURE; COMPUTER SIMULATION; ELECTRON DEVICES; SEMICONDUCTOR MATERIALS;

BAND-TO-BAND-TUNNELING-INDUCED HOT-ELECTRON (BBHE); HIGH PROGRAMMING SPEED; LOW-VOLTAGE OPERATION;

ELECTRON TUNNELING;

EID: 33748490272     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2006.880642     Document Type: Article

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