Device characteristics of 0.35 μm P-channel DINOR flash memory using band-to-band tunneling-induced hot electron (BBHE) programming

IEEE Transactions on Electron Devices

Volumn 46, Issue 9, 1999, Pages 1866-1871

  Ohnakado, Takahiro ^a   Onoda, Hiroshi ^a   Sakamoto, Osamu ^a   Hayashi, Kiyoshi ^a   Nishioka, Naho ^a   Takada, Hiroshi ^a   Sugahara, Kazuyuki ^a   Ajika, Natsuo ^a   Satoh, Shin Ichi ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; COMPUTER SYSTEMS PROGRAMMING; ELECTRIC CURRENTS; ELECTRON TUNNELING; HOT CARRIERS; INTEGRATED CIRCUIT MANUFACTURE; PARALLEL PROCESSING SYSTEMS;

BAND-TO-BAND TUNNELING-INDUCED HOT ELECTRON (BBHE) PROGRAMMING; FLASH MEMORY;

ASSOCIATIVE STORAGE;

EID: 0032595358     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.784186     Document Type: Article

References (13)

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