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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 42, Issue 4 B, 2003, Pages 2028-2032

Low-voltage and low-current flash memory using source induced band-to-band tunneling hot electron injection to perform programming

(8) Pan, Liyang a Zhu, Jun a Zeng, Ying a Fu, Yuxia a Wu, Dong a Duan, Zhigang a Liu, Jianzhao a Sun, Lei a

a TSINGHUA UNIVERSITY (China)

Author keywords

Band to band; BBHE; CHE; Disturbance; Flash memory; Fowler Nordheim; SIBE

Indexed keywords

BAND STRUCTURE; COMPUTER SIMULATION; ELECTRIC CURRENTS; ELECTRON TUNNELING; HOT CARRIERS; ION IMPLANTATION; LEAKAGE CURRENTS; RELIABILITY; THRESHOLD VOLTAGE; VOLTAGE CONTROL;

BAND TO BAND TUNNELING HOT ELECTRON INJECTION; CONTROL GATE VOLTAGE; DRAIN VOLTAGE; LARGE READ CURRENT; LOW BIT LINE LEAKAGE CURRENT;

FLASH MEMORY;

EID: 0038348020 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.42.2028 Document Type: Article

Times cited : (3)

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