Transient simulation to analyze flash memory erase improvements due to germanium content in the substrate

IEEE Transactions on Electron Devices

Volumn 57, Issue 10, 2010, Pages 2499-2503

  Wolfson, Scott C ^a   Ho, Fat Duen ^a  

^a UNIVERSITY OF ALABAMA IN HUNTSVILLE   (United States)

Author keywords

Flash memory; metaloxidesemiconductor (MOS) memory circuit; semiconductor device models

Indexed keywords

FLOATING GATES; INDEPENDENT VARIABLES; METALOXIDESEMICONDUCTOR (MOS) MEMORY CIRCUIT; MOSFETS; PHYSICS-BASED; POISSON'S EQUATION; SIGE SUBSTRATES; SILICON GERMANIUM; SIMULATION-BASED; SUBSTRATE MATERIAL; TRANSIENT SIMULATION;

GERMANIUM; POISSON EQUATION; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR SWITCHES; SILICON ALLOYS; SUBSTRATES;

FLASH MEMORY;

EID: 77956995577     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2010.2058770     Document Type: Article

References (8)

1. B. Van Zeghbroeck, Principles of Semiconductor Devices. Boulder, CO: Univ. Colorado, 2007.
2. Y. Dan, R. Axley, and F. Ho, "Capacitor model for a floating gate EEPROM cell," Int. J. Electron., vol.84, no.6, pp. 561-581, Jun. 1998.
3. M. Lenxlinger and E. Snow, "Fowler-Nordheim tunneling into thermally grown SiO2," J. Appl. Phys., vol.40, no.1, pp. 278-283, Jan. 1969.
4. Y. Tsividis, Operation and Modeling of the MOS Transistor. London, U.K.: Oxford Univ. Press, 1999.
5. R. Muller and T. Kamins, Device Electronics for Integrated Circuits. Hoboken, NJ: Wiley, 2003.
6. S. Wolfson and F. Ho, "Temperature dependant Flash memory erase transient simulation-Part I," Microelectron. Eng., Jan. 4, 2010, DOI:10.1016/j.mee.2009.12.078.
7. S. Wolfson and F. Ho, "Temperature dependant Flash memory erase transient simulation-Part II," Microelectron. Eng., Feb. 6, 2010, DOI:10.1016/j.mee.2010.01.008.
8. W. Lee, "The effect of dimensional scaling on the erase characteristics of NOR Flash memory," IEEE Electron. Device Lett., vol.24, no.4, pp. 245-247, Apr. 2003.