New programming and erasing schemes for p-channel flash memory

IEEE Electron Device Letters

Volumn 21, Issue 10, 2000, Pages 491-493

  Park, Jong T ^a   Chun, Jeoung Y ^a   Kim, Han K ^a   Jang, Sung J ^a   Yu, Chong G ^a  

^a SolarLight Ltd   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; ELECTRON TRANSPORT PROPERTIES; SUBSTRATES;

ELECTRON INJECTION EFFICIENCY; P-CHANNEL FLASH MEMORY;

DATA STORAGE EQUIPMENT;

EID: 0034296134     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.870611     Document Type: Article

References (7)

1. C. C.-H. Hsu et al., "A high speed, low power p-channel flash EEPROM using silicon rich oxides as tunneling dielectric," in Ext. Abs. SSDM, 1992, pp. 140-142.
2. T. Ohnakado et al., "Novel electron injection method using band-to-band tunneling induced hot electron (BBHE) for flash memory with n. p-channel cell," in IEDM Tech. Dig., 1995, pp. 279-283.
3. S. S. Chung, S. N. Kuo, C. M. Yih, and T. S. Chao, "Performance and reliability of p-channel flash memories with different programming schemes," in IEDM Tech. Dig., 1997, pp. 295-298.
4. T. Ohnakado et al., "Device characteristics of 0.35 μm p-channel DINOR flash memory using band-to-band tunneling induced hot electron (BBHE) programming," IEEE Trans. Electron Devices, vol. 46, pp. 1866-1870, Sept. 1999.
5. N. Tsuji et al., "New erase scheme for DINOR flash memory enhanced erase/write cycling endurance characteristics," in IEDM Tech. Dig., 1994, pp. 53-56.
6. V. H. Chan and D. K. Y. Liu, "An enhanced erased mechanism during channel fowler-nordheim tunneling in flash EEPROM memory devices," IEEE Electron Device Lett., vol. 20, pp. 140-142, Mar. 1999.
7. J. H. Lee et al., "Using erase self-detrapped effect to eliminate the flash cell program/erase cycling Vth window close," in Proc. IRPS, 1999, pp. 24-28.