Dependence of the switching characteristics of resistance random access memory on the type of transition metal oxide

2010 Proceedings of the European Solid State Device Research Conference, ESSDERC 2010

Volumn , Issue , 2010, Pages 400-403

  Kim, Wan Gee ^a   Sung, Min Gyu ^b   Kim, Sook Joo ^b   Kim, Ja Yong ^b   Moon, Ji Won ^b   Yoon, Sung Joon ^b   Kim, Jung Nam ^b   Gyun, Byung Gu ^b   Kim, Taeh Wan ^b   Kim, Chi Ho ^b   Byun, Jun Young ^b   Kim, Won ^b   Youn, Te One ^b   Yoo, Jong Hee ^b   Oh, Jang Won ^b   Kim, Ho Joung ^b   Joo, Moon Sig ^b   Roh, Jae Sung ^b   Park, Sung Ki ^b  

^a Hynix Semiconductor Inc   (South Korea)

^b NONE

Author keywords

[No Author keywords available]

Indexed keywords

DEVICE INTEGRATION; ELECTRICAL PROPERTY; LOW CURRENTS; RESISTANCE RANDOM ACCESS MEMORY; RETENTION CHARACTERISTICS; SWITCHING CHARACTERISTICS; TIO; TRANSITION-METAL OXIDES; VOLTAGE OPERATIONS;

ELECTRIC PROPERTIES; HAFNIUM COMPOUNDS; METALLIC COMPOUNDS; RANDOM ACCESS STORAGE; RESEARCH; SOLID STATE DEVICES; TITANIUM NITRIDE; TRANSITION METALS;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 78649915305     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDERC.2010.5618197     Document Type: Conference Paper

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