Voltage-induced recovery of dielectric breakdown (high current resistance switching) in HfO2

Applied Physics Letters

Volumn 98, Issue 2, 2011, Pages

  El Kamel, F ^a   Gonon, P ^b   Vallee C ^b   Jousseaume, V ^c   Grampeix, H ^c  

^a UNIVERSITY OF TUNIS EL MANAR   (Tunisia)

^b UNIV GRENOBLE ALPES   (France)

^c CEA GRENOBLE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC BREAKDOWNS; HARD BREAKDOWN; HIGH CONDUCTANCE STATE; HIGH CURRENTS; HIGH-TO-LOW; INSULATING STATE; METAL ELECTRODES; POST-BREAKDOWN CONDUCTANCE; RESISTIVE TRANSITION; VOLTAGE BIASING; VOLTAGE SOURCE;

HAFNIUM COMPOUNDS; PLATINUM;

CHROMIUM;

EID: 78751556312     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3541961     Document Type: Article

References (8)

1. J. W. McPherson, R. B. Khamankar, and A. Shanware, J. Appl. Phys. 88, 5351 (2000).
2. S. Lombardo, J. H. Stathis, B. P. Linder, K. L. Pey, F. Palumbo, and C. H. Tung, J. Appl. Phys. 98, 121301 (2005).
3. X. Wu, K. L. Pey, G. Zhang, P. Bai, X. Li, W. H. Liu, and N. Raghavan, Appl. Phys. Lett. 96, 202903 (2010).
4. X. Li, K. L. Pey, M. Bosman, W. H. Liu, and T. Kauerauf, Appl. Phys. Lett. 96, 022903 (2010).
5. G. Dearnaley, A. M. Stoneham, and D. V. Morgan, Rep. Prog. Phys. 33, 1129 (1970).
6. R. Waser, R. Dittmann, G. Staikov, and K. Szot, Adv. Mater. (Weinheim, Ger.) 21, 2632 (2009).
7. H. D. Lee, B. Magyari-Köpe, and Y. Nishi, Phys. Rev. B 81, 193202 (2010).
8. P. Gonon, M. Mougenot, C. Vallée, C. Jorel, V. Jousseaume, H. Grampeix, and F. El Kamel, J. Appl. Phys. 107, 074507 (2010).