Effect of chain length on the sensing of volatile organic compounds by means of silicon nanowires

ACS Applied Materials and Interfaces

Volumn 5, Issue 12, 2013, Pages 5748-5756

  Wang, Bin ^a   Haick, Hossam ^a  

^a TECHNION ISRAEL INSTITUTE OF TECHNOLOGY   (Israel)

Author keywords

dipole; field effect transistor; silicon nanowire; vapor sensor; volatile organic compound

Indexed keywords

DIPOLE; HIGH PERFORMANCE SENSORS; MOLECULAR MODIFICATION; PROPORTIONAL RELATIONSHIPS; SENSING PERFORMANCE; SILICON NANOWIRE FIELD-EFFECT TRANSISTORS; SILICON NANOWIRES; VAPOR SENSORS;

BINDING ENERGY; FIELD EFFECT TRANSISTORS; GAS CHROMATOGRAPHY; NANOWIRES; SELF ASSEMBLY; SENSORS; SILICON; VAPORS; VOLATILE ORGANIC COMPOUNDS;

CHAIN LENGTH;

NANOWIRE; SILICON; VOLATILE ORGANIC COMPOUND;

ARTICLE; CHEMISTRY; ENVIRONMENTAL MONITORING; PARTICLE SIZE; SURFACE PROPERTY;

ENVIRONMENTAL MONITORING; NANOWIRES; PARTICLE SIZE; SILICON; SURFACE PROPERTIES; VOLATILE ORGANIC COMPOUNDS;

EID: 84879508811     PISSN: 19448244     EISSN: 19448252     Source Type: Journal    
DOI: 10.1021/am401265z     Document Type: Article

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