Sidewall mobility and series resistance in a multichannel tri-gate MOSFET

Semiconductor Science and Technology

Volumn 28, Issue 6, 2013, Pages

  Park, S J ^a,b   Jeon, D Y ^a,b   Montes L ^a   Barraud, S ^c   Kim, G T ^b   Ghibaudo, G ^a  

^a IMEP LAHC   (France)

^b Korea University   (South Korea)

^c CEA LETI   (France)

Author keywords

[No Author keywords available]

Indexed keywords

2-D NUMERICAL SIMULATION; DOPING CONCENTRATION; HIGH SERIES RESISTANCES; LOW-TEMPERATURE MEASUREMENTS; MOBILITY DEGRADATION; SERIES RESISTANCES; SOURCE/DRAIN EXTENSION REGIONS; SURFACE ROUGHNESS SCATTERING;

COMPUTER SIMULATION; ELECTRIC RESISTANCE; SURFACE ROUGHNESS; TEMPERATURE MEASUREMENT;

MOSFET DEVICES;

EID: 84879365952     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/28/6/065009     Document Type: Article

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