메뉴 건너뛰기




Volumn 7, Issue 3, 2008, Pages 291-298

Impact of LER and random dopant fluctuations on FinFET matching performance

Author keywords

Lithography; MOSFETs; Semiconductor device doping; Simulation; Size control; Stochastic processes

Indexed keywords

COMPUTER SIMULATION; LITHOGRAPHY; MOSFET DEVICES; RANDOM PROCESSES;

EID: 44049092378     PISSN: 1536125X     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNANO.2008.917838     Document Type: Article
Times cited : (92)

References (24)
  • 4
    • 0028548950 scopus 로고
    • Experimental study of threshold voltage fluctuation due to statistical variation of channel dopant number in MOSFETs
    • Nov
    • T. Mizuno, J. Okamura, and A. Toriumi, "Experimental study of threshold voltage fluctuation due to statistical variation of channel dopant number in MOSFETs," IEEE Trans. Electron Devices, vol. 41, no. 11, pp. 2216-2221, Nov. 1994.
    • (1994) IEEE Trans. Electron Devices , vol.41 , Issue.11 , pp. 2216-2221
    • Mizuno, T.1    Okamura, J.2    Toriumi, A.3
  • 5
    • 0032320827 scopus 로고    scopus 로고
    • Random dopant induced threshold voltage lowering and fluctuations in sub 0.1 micron MOSFETs: A 3D 'atomistic' simulation study
    • Dec
    • A. Asenov, "Random dopant induced threshold voltage lowering and fluctuations in sub 0.1 micron MOSFETs: A 3D 'atomistic' simulation study," IEEE Trans. Electron Devices, vol. 45, no. 12, pp. 2505-2513, Dec. 1998.
    • (1998) IEEE Trans. Electron Devices , vol.45 , Issue.12 , pp. 2505-2513
    • Asenov, A.1
  • 6
    • 0036498483 scopus 로고    scopus 로고
    • Design considerations for CMOS near the limits of scaling
    • Mar
    • D. J. M. Frank and Y. Taur, "Design considerations for CMOS near the limits of scaling," Solid State Electron, ,vol. 46, no. 3, pp. 315-320, Mar. 2002.
    • (2002) Solid State Electron , vol.46 , Issue.3 , pp. 315-320
    • Frank, D.J.M.1    Taur, Y.2
  • 8
    • 0036928972 scopus 로고    scopus 로고
    • Determination of the line edge roughness specification for 34 nm devices
    • T. Linton, M. Chandhok, B. J. Rice, and G. Schrom, "Determination of the line edge roughness specification for 34 nm devices," in Proc. IEDM Tech. Dig., 2002, pp. 303-306.
    • (2002) Proc. IEDM Tech. Dig , pp. 303-306
    • Linton, T.1    Chandhok, M.2    Rice, B.J.3    Schrom, G.4
  • 9
    • 0042532317 scopus 로고    scopus 로고
    • Intrinsic parameter fluctuations in decananometer MOSFETs induced by gate line edge roughness
    • May
    • A. Asenov, S. Kaya, and A. R. Brown, "Intrinsic parameter fluctuations in decananometer MOSFETs induced by gate line edge roughness," IEEE Trans. Electron Devices, vol. 50, no. 5, pp. 1254-1260, May 2003.
    • (2003) IEEE Trans. Electron Devices , vol.50 , Issue.5 , pp. 1254-1260
    • Asenov, A.1    Kaya, S.2    Brown, A.R.3
  • 10
    • 0036029137 scopus 로고    scopus 로고
    • Study of gate line edge roughness effects in 50 nm bulk MOSFET devices
    • S. Xiong, J. Bokor, Q. Xiang, P. Fisher, I. Dudley, and P. Rao, "Study of gate line edge roughness effects in 50 nm bulk MOSFET devices," in Proc. SPIE, 2002, vol. 4689, pp. 733-741.
    • (2002) Proc. SPIE , vol.4689 , pp. 733-741
    • Xiong, S.1    Bokor, J.2    Xiang, Q.3    Fisher, P.4    Dudley, I.5    Rao, P.6
  • 11
    • 0041537563 scopus 로고    scopus 로고
    • Intrinsic fluctuations in sub 10-nm double-gate MOSFETs introduced by discreteness of charge and matter
    • Dec
    • A. R. Brown, A. Asenov, and J. R. Watling, "Intrinsic fluctuations in sub 10-nm double-gate MOSFETs introduced by discreteness of charge and matter," IEEE Trans. Nanotechnol., vol. 1, no. 4, pp. 195-200, Dec. 2002.
    • (2002) IEEE Trans. Nanotechnol , vol.1 , Issue.4 , pp. 195-200
    • Brown, A.R.1    Asenov, A.2    Watling, J.R.3
  • 12
    • 0242332710 scopus 로고    scopus 로고
    • Sensitivity of double-gate and FinFET devices to process variations
    • Nov
    • S. Xiong and J. Bokor, "Sensitivity of double-gate and FinFET devices to process variations," IEEE Trans. Electron Devices, vol. 50, no. 11, pp. 2255-2261, Nov. 2003.
    • (2003) IEEE Trans. Electron Devices , vol.50 , Issue.11 , pp. 2255-2261
    • Xiong, S.1    Bokor, J.2
  • 14
    • 38349171409 scopus 로고    scopus 로고
    • ISE-TCAD Sentaurus Release
    • User's Manual, ISE-TCAD Sentaurus Release, 2006.
    • (2006) User's Manual
  • 15
    • 33746888283 scopus 로고    scopus 로고
    • Quantum correction simulation of random dopant-induced threshold voltage fluctuations in nanoscale metal-oxide- semiconductor structures
    • Y. Li and S.-M. Yu, "Quantum correction simulation of random dopant-induced threshold voltage fluctuations in nanoscale metal-oxide- semiconductor structures," in Proc. 5th IEEE Conf. Nanotechnol., 2005, pp. 527-530.
    • (2005) Proc. 5th IEEE Conf. Nanotechnol , pp. 527-530
    • Li, Y.1    Yu, S.-M.2
  • 16
    • 0035883854 scopus 로고    scopus 로고
    • Statistical analysis of semiconductor devices
    • Sep
    • I. D. Mayergoyz and P. Andrei, "Statistical analysis of semiconductor devices," J. Appl. Phys., vol. 90, no. 6, pp. 3019-3029, Sep. 2001.
    • (2001) J. Appl. Phys , vol.90 , Issue.6 , pp. 3019-3029
    • Mayergoyz, I.D.1    Andrei, P.2
  • 17
    • 4344717092 scopus 로고    scopus 로고
    • Analysis of fluctuations in semiconductor devices through self-consistent Poisson-Schrödinger computations
    • Aug
    • P. Andrei and I. Mayergoyz, "Analysis of fluctuations in semiconductor devices through self-consistent Poisson-Schrödinger computations," J. Appl. Phys., vol. 96, no. 4, pp. 2071-2079, Aug. 2004.
    • (2004) J. Appl. Phys , vol.96 , Issue.4 , pp. 2071-2079
    • Andrei, P.1    Mayergoyz, I.2
  • 21
    • 0242577291 scopus 로고    scopus 로고
    • R. Lindsay, B. Pawlak, J. Kittl, K. Henson, C. Torregiani, S. Giangrandi, R. Surdeanu, W. Vandervorst, A. Mayur, J. Ross, S. McCoy, J. Gelpey, K. Elliott, X. Pages, A. Satta, A. Lauwers, P. Stolk, and K. Maexl, A comparison of spike, flash, SPER and laser annealing for 45 nm CMOS, in Proc. MRS Spring Meet., Apr. 2003, p. D.7.4.
    • R. Lindsay, B. Pawlak, J. Kittl, K. Henson, C. Torregiani, S. Giangrandi, R. Surdeanu, W. Vandervorst, A. Mayur, J. Ross, S. McCoy, J. Gelpey, K. Elliott, X. Pages, A. Satta, A. Lauwers, P. Stolk, and K. Maexl, "A comparison of spike, flash, SPER and laser annealing for 45 nm CMOS," in Proc. MRS Spring Meet., Apr. 2003, p. D.7.4.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.