Mobility analysis of surface roughness scattering in FinFET devices

Solid-State Electronics

Volumn 62, Issue 1, 2011, Pages 195-201

  Lee, Jae Woo ^a,b   Jang, Doyoung ^a,b   Mouis, Mireille ^a   Kim, Gyu Tae ^a   Chiarella, Thomas ^c   Hoffmann, Thomas ^c   Ghibaudo, Gérard ^a  

^a IMEP LAHC   (France)

^b Korea University   (South Korea)

^c IMEC   (Belgium)

Author keywords

Effective mobility; FinFET; Low temperature measurement; Surface roughness scattering; Surface separation

Indexed keywords

EFFECTIVE MOBILITIES; FINFET; LOW TEMPERATURE MEASUREMENT; SURFACE ROUGHNESS SCATTERING; SURFACE SEPARATION;

DRAIN CURRENT; GATES (TRANSISTOR); INTEGRATED CIRCUITS; SCATTERING; SURFACE PROPERTIES; TEMPERATURE MEASUREMENT;

SURFACE ROUGHNESS;

EID: 79957930553     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2011.04.020     Document Type: Article

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