Relationship between empirical and theoretical mobility models in silicon inversion layers

IEEE Transactions on Electron Devices

Volumn 43, Issue 9, 1996, Pages 1394-1398

  Reichert, Guenter ^a   Ouisse, Thierry ^a  

^a Lab de Physique des Composants a   (France)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; PHONONS; SCATTERING; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MODELS; SURFACE ROUGHNESS;

INVERSION CHARGE; SURFACE MOBILITY;

MOSFET DEVICES;

EID: 0030244412     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.535324     Document Type: Article

References (16)

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