Analysis of temperature variation influence on the analog performance of 45° rotated triple-gate nMuGFETs

Solid-State Electronics

Volumn 70, Issue , 2012, Pages 39-43

  Pavanello, Marcelo Antonio ^a,b   Souza, Michelly De ^a   Martino, Joao Antonio ^b   Simoen, Eddy ^c   Claeys, Cor ^c,d  

^a CENTRO UNIVERSITÁRIO DA FEI   (Brazil)

^b UNIVERSITY OF SÃO PAULO   (Brazil)

^c IMEC   (Belgium)

^d UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

Analog operation; Early voltage; Intrinsic gain; MuGFET; Triple gate

Indexed keywords

ANALOG OPERATION; EARLY VOLTAGE; INTRINSIC GAIN; MUGFET; TRIPLE-GATE;

CARRIER MOBILITY; GAIN MEASUREMENT; GATE DIELECTRICS; SUBSTRATES; TITANIUM NITRIDE; TRANSCONDUCTANCE;

ROTATION;

EID: 84858071525     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2011.11.014     Document Type: Conference Paper

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