Low-pressure joining of large-area devices on copper using nanosilver paste

IEEE Transactions on Components, Packaging and Manufacturing Technology

Volumn 3, Issue 6, 2013, Pages 915-922

  Zheng, Hanguang ^a   Berry, David ^a   Calata, Jesus N ^a   Ngo, Khai D T ^a   Luo, Susan ^b   Lu, Guo Quan ^a  

^a Virginia Polytechnic Institute and State University   (United States)

^b NBE Technologies LLC   (United States)

Author keywords

Copper surface; die attach; insulated gate bipolar transistor (IGBT) module; low temperature joining; nanosilver paste; power electronics packaging

Indexed keywords

COPPER SURFACE; DIE-ATTACH; INSULATED GATE; LOW TEMPERATURES; NANO-SILVER PASTES;

BOND STRENGTH (MATERIALS); BONDING; COPPER; ELECTRONICS PACKAGING; INSULATED GATE BIPOLAR TRANSISTORS (IGBT); JOINING; POWER ELECTRONICS; SINTERED ALUMINA; SUBSTRATES; TEMPERATURE; TESTING;

SINTERING;

EID: 84878632110     PISSN: 21563950     EISSN: None     Source Type: Journal    
DOI: 10.1109/TCPMT.2013.2258971     Document Type: Article

References (19)

1. P. Beckedahl, T. Grasshoff, and M. Lederer, "A new power module concept for automotive applications," in Proc. Int. Exhibit. Conf. Power Electron. Intell. Motion Power Qual., Nuremberg, Germany, pp. 1-5, 2007.
2. J. Richmond, S. Leslie, B. Hull, M. Das, A. Agarwal, and J. Palmour, "Roadmap for megawatt class power switch modules utilizing large area silicon carbide MOSFETs and JBS diodes," in Proc. IEEE Energy Convers. Congr. Exposit., Sep. 2009, pp. 106-111.
3. U. Scheuermann and F. Ebersberger, "Packaging of large area power chips-Extending the limits of standard module technology," in Proc. 4th Int. Conf. Integr. Power Electron. Syst., Jun. 2006, pp. 1-6.
4. W. Wondrak, R. Held, E. Niemann, and U. Schmid, "SiC devices for advanced power and high-temperature applications," IEEE Trans. Ind. Electron., vol. 48, no. 2, pp. 307-308, Apr. 2001. (Pubitemid 32419017)
5. M. Abtew and G. Selvaduray, "Lead-free solders in microelectronics," Mater. Sci. Eng. R., vol. 27, nos. 5-6, pp. 95-141, 2000.
6. H. Ma and J. C. Suhling, "A review of mechanical properties of lead-free solders for electronic packaging," J. Mater. Sci., vol. 44, no. 5, pp. 1141-1158, 2009.
7. K. Stinson-Bagby, D. Huff, K. Katsis, D. V. Wyk, and G. Q. Lu, "Thermal performance and microstructure of lead versus lead-free solder die attach interface in power device packages," in Proc. IEEE Int. Symp. Electron. Environ., May 2004, pp. 27-32.
8. H. A. Mustain, W. D. Brown, and S. S. Ang, "Transient liquid phase die attach for high-temperature silicon carbide power devices," IEEE Trans. Compon. Packag. Technol., vol. 33, no. 3, pp. 563-570, Sep. 2010.
9. P. Quintero and F. P. McCluskey, "Silver-indium transient liquid phase sintering for high temperature die attachment," J. Microelectron. Electron. Packag., vol. 6, pp. 66-74, Mar. 2009.
10. S. W. Yoon, M. D. Glover, and K. Shiozaki, "Nickel-tin transient liquid phase bonding toward high-temperature operational power electronics in electrified vehicles," IEEE Trans. Power Electron., vol. 28, no. 5, pp. 2448-2456, May 2013.
11. H. Schwarzbauer and R. Kuhnert, "Novel large area joining technique for improved power device performance," in Proc. Ind. Appl. Soc. Annu. Meeting, vol. 2. 1989, pp. 1348-1351. (Pubitemid 20654117)
12. Z. Z. Zhang and G. Q. Lu, "Pressure-assisted low-temperature sintering of silver paste as an alternative die-attach solution to solder reflow," IEEE Trans. Electron. Packag. Manuf., vol. 25, no. 4, pp. 279-283, Oct. 2002.
13. C. Göbl and J. Faltenbacher, "Low temperature sinter technology die attachment for power electronic applications," in Proc. 6th Int. Conf. Integr. Power Electron. Syst., Mar. 2010, pp. 1-5.
14. J. G. Bai, Z. Z. Zhang, J. N. Calata, and G. Q. Lu, "Low-temperature sintered nanoscale silver as a novel semiconductor device-metallized substrate interconnect material," IEEE Trans. Compon. Packag. Technol., vol. 29, no. 3, pp. 589-593, Sep. 2006. (Pubitemid 44375461)
15. J. G. Bai, Z. Z. Zhang, G. Q. Lu, J. Yin, J. D. V. Wyk, L. Zhu, and T. P. Chow, "Low-temperature sintered silver attachment for high-temperature operation of SiC power devices," in Proc. 4th Int. Conf. Integr. Power Electron. Syst., Jun. 2006, pp. 1-6.
16. 2) chips," IEEE Trans. Compon. Packag. Technol., vol. 33, no. 1, pp. 98-104, Mar. 2010.
17. D. D. L. Chung, Materials for Electronic Packaging. Bedford, MA, USA: Digital, 1995.
18. J.G. Bai, J. N. Calata, and G. Q. Lu, "Processing and characterization of nanosilver pastes for die-attaching SiC devices," IEEE Trans. Electron. Packag. Manuf., vol. 30, no. 4, pp. 241-245, Oct. 2007. (Pubitemid 47577904)
19. M. Knoerr and A. Schletz, "Power semiconductor joining through sintering of silver nanoparticles: Evaluation of influence of parameters time, temperature and pressure on density, strength and reliability," in Proc. 6th Int. Conf. Integr. Power Electron. Syst., Mar. 2010, pp. 1-6.