-
1
-
-
0027576098
-
6-H silicon carbide devices and applications
-
Palmour, J.W.; Edmond, J.A.; Kong, H.S.; and Carter, C.H.: 6-H silicon carbide devices and applications, Physica B, vol. 185, pp. 461-465, 1993
-
(1993)
Physica B
, vol.185
, pp. 461-465
-
-
Palmour, J.W.1
Edmond, J.A.2
Kong, H.S.3
Carter, C.H.4
-
2
-
-
84934328707
-
600 V, 1-40 A, Schottky diodes in SiC and their applications
-
Agarwal, A.; Singh, R.; Ryu, S.; Richmond, J.; Capell, c.; Schwab, S.; Moore, B.; and Palmour, J.: 600 V, 1-40 A, Schottky diodes in SiC and their applications, CREE Power Application Notes
-
CREE Power Application Notes
-
-
Agarwal, A.1
Singh, R.2
Ryu, S.3
Richmond, J.4
Capell, C.5
Schwab, S.6
Moore, B.7
Palmour, J.8
-
3
-
-
0035305734
-
SiC devices for advanced power and high-temperature applications
-
Wondrak, W.; Held, R.; Niemann, E.; and Schmid, U.: SiC devices for advanced power and high-temperature applications, IEEE Transactions on Industrial Electronics, vol. 48, pp. 307-308,2001
-
(2001)
IEEE Transactions on Industrial Electronics
, vol.48
, pp. 307-308
-
-
Wondrak, W.1
Held, R.2
Niemann, E.3
Schmid, U.4
-
4
-
-
0033306992
-
High temperature (450°C) reliable NMISFET's on p-type 6H-SiC
-
Wang, X.W.; Zhu, W.J.; Guo, X.; Ma, T.P.; Tucker, J.B.; and Rao, M.Y.: High temperature (450°C) reliable NMISFET's on p-type 6H-SiC, International Electron Devices Meeting 1999. IEEE Technical Digest (Cat. No.99CH36318). pp. 209-212, 1999
-
(1999)
International Electron Devices Meeting 1999. IEEE Technical Digest (Cat. No.99CH36318)
, pp. 209-212
-
-
Wang, X.W.1
Zhu, W.J.2
Guo, X.3
Ma, T.P.4
Tucker, J.B.5
Rao, M.Y.6
-
5
-
-
0037532594
-
High temperature SiC trench gate p-IGBTs
-
Singh, R.; Ryu, S.H.; Capell, D.C.; and Palmour, J.W.: High temperature SiC trench gate p-IGBTs, IEEE Transactions on Electron Devices, vol. 50, pp. 774-784,2003
-
(2003)
IEEE Transactions on Electron Devices
, vol.50
, pp. 774-784
-
-
Singh, R.1
Ryu, S.H.2
Capell, D.C.3
Palmour, J.W.4
-
6
-
-
11244292142
-
Silicon- carbide (SiC) semiconductor power electronics for extreme high-temperature environments
-
Hornberger, J.; Lostetter, A.B.; Olejniczak, K.J.; McNutt, T.; Lal, S.M.; and Mantooth, A.: Silicon- carbide (SiC) semiconductor power electronics for extreme high-temperature environments, Proceedings IEEE Aerospace Conference, vol. 4, pp. 2538-2555,2004
-
(2004)
Proceedings IEEE Aerospace Conference
, vol.4
, pp. 2538-2555
-
-
Hornberger, J.1
Lostetter, A.B.2
Olejniczak, K.J.3
McNutt, T.4
Lal, S.M.5
Mantooth, A.6
-
7
-
-
0036768050
-
Silver-indium joints produced at low temperature for high temperature devices
-
Chuang, R.W.; and Lee, c.: Silver-indium joints produced at low temperature for high temperature devices, IEEE Transactions on Components and Packing Technologies, vol. 25, pp. 453-458, 2002
-
(2002)
IEEE Transactions on Components and Packing Technologies
, vol.25
, pp. 453-458
-
-
Chuang, R.W.1
Lee, C.2
-
8
-
-
0034428510
-
Silicon carbide die-attach scheme for 500°C operation
-
San Francisco, CA
-
Chen, L.Y.; Hunter, G.W.; and Neudeck, P.G.: Silicon carbide die-attach scheme for 500°C operation, in Wide-Bandgap Electronic Devices Symp. (Materials Research Soc. Symp.) Proc., vol. 622, San Francisco, CA, pp. T8.10.1-6, 2001
-
(2001)
Wide-Bandgap Electronic Devices Symp. (Materials Research Soc. Symp.) Proc.
, vol.622
, pp. T8101-T8106
-
-
Chen, L.Y.1
Hunter, G.W.2
Neudeck, P.G.3
-
9
-
-
3042762894
-
Thermomechanical analysis of gold-based SiC die-attach assembly
-
Meyyappan, K.; McCluskey, P.; and Chen, L.Y.: Thermomechanical analysis of gold-based SiC die-attach assembly, IEEE Transactions on Device and Materials Reliability, vol. 3, no. 4, pp. 152-158,2003
-
(2003)
IEEE Transactions on Device and Materials Reliability
, vol.3
, Issue.4
, pp. 152-158
-
-
Meyyappan, K.1
McCluskey, P.2
Chen, L.Y.3
-
10
-
-
0025800802
-
Novel large area joining technique for improved power device performance
-
Schwarzbauer, H.: Novel large area joining technique for improved power device performance, IEEE Transactions on Industrial Applications, vol. 27, pp. 93-95, 1991
-
(1991)
IEEE Transactions on Industrial Applications
, vol.27
, pp. 93-95
-
-
Schwarzbauer, H.1
-
13
-
-
14644401074
-
Thermal behavior of silver nanoparticies for lowtemperature interconnect applications
-
Moon, K.S.; Dong, H.; Maric, R.; Pothukuchi, S.; Hunt, A.; Li, Y.; and Wong, c.P.: Thermal behavior of silver nanoparticies for lowtemperature interconnect applications, Journal of Electronic Materials, vol. 34, no. 2, pp. 168-175, 2005
-
(2005)
Journal of Electronic Materials
, vol.34
, Issue.2
, pp. 168-175
-
-
Moon, K.S.1
Dong, H.2
Maric, R.3
Pothukuchi, S.4
Hunt, A.5
Li, Y.6
Wong, C.P.7
-
14
-
-
33845572282
-
Low-temperature sintered nanoscale silver as a novel semiconductor device-metallized substrate interconnect material
-
Accepted by
-
Bai, J.G.; Zhang, Z.; Calata, J.N.; and Lu, G.Q.: Low-temperature sintered nanoscale silver as a novel semiconductor device-metallized substrate interconnect material, Accepted by IEEE Trans. Compo Pack. Tech. in June 2005
-
(2005)
IEEE Trans. Compo Pack. Tech. in June
-
-
Bai, J.G.1
Zhang, Z.2
Calata, J.N.3
Lu, G.Q.4
-
15
-
-
84971403128
-
-
CREE datasheet: CPWR-0600S0 10 Silicon Carbide Schottky Diodes
-
CREE datasheet: CPWR-0600S0 10 Silicon Carbide Schottky Diodes
-
-
-
-
16
-
-
84971465201
-
Processing and characterization of nanoscale silver pastes for attaching semiconductor devices, Submitted to
-
Bai, J. G.; Zhang, Z.; Calata, J.N.; and Lu, G.Q.: Processing and characterization of nanoscale silver pastes for attaching semiconductor devices, Submitted to IEEE Trans. Compo Pack. Tech. in October 2005
-
(2005)
IEEE Trans. Compo Pack. Tech. in October
-
-
Bai, J.G.1
Zhang, Z.2
Calata, J.N.3
Lu, G.Q.4
|