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Volumn , Issue , 2006, Pages

Low-temperature sintered silver attachment for high-temperature operation of SiC power devices

Author keywords

[No Author keywords available]

Indexed keywords

DIES; GOLD; GOLD COATINGS; HIGH TEMPERATURE OPERATIONS; SCHOTTKY BARRIER DIODES; SILICON CARBIDE; SILVER; SINTERING; SUBSTRATES; TEMPERATURE;

EID: 84971426718     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (3)

References (16)
  • 1
    • 0027576098 scopus 로고
    • 6-H silicon carbide devices and applications
    • Palmour, J.W.; Edmond, J.A.; Kong, H.S.; and Carter, C.H.: 6-H silicon carbide devices and applications, Physica B, vol. 185, pp. 461-465, 1993
    • (1993) Physica B , vol.185 , pp. 461-465
    • Palmour, J.W.1    Edmond, J.A.2    Kong, H.S.3    Carter, C.H.4
  • 7
    • 0036768050 scopus 로고    scopus 로고
    • Silver-indium joints produced at low temperature for high temperature devices
    • Chuang, R.W.; and Lee, c.: Silver-indium joints produced at low temperature for high temperature devices, IEEE Transactions on Components and Packing Technologies, vol. 25, pp. 453-458, 2002
    • (2002) IEEE Transactions on Components and Packing Technologies , vol.25 , pp. 453-458
    • Chuang, R.W.1    Lee, C.2
  • 10
    • 0025800802 scopus 로고
    • Novel large area joining technique for improved power device performance
    • Schwarzbauer, H.: Novel large area joining technique for improved power device performance, IEEE Transactions on Industrial Applications, vol. 27, pp. 93-95, 1991
    • (1991) IEEE Transactions on Industrial Applications , vol.27 , pp. 93-95
    • Schwarzbauer, H.1
  • 13
  • 14
    • 33845572282 scopus 로고    scopus 로고
    • Low-temperature sintered nanoscale silver as a novel semiconductor device-metallized substrate interconnect material
    • Accepted by
    • Bai, J.G.; Zhang, Z.; Calata, J.N.; and Lu, G.Q.: Low-temperature sintered nanoscale silver as a novel semiconductor device-metallized substrate interconnect material, Accepted by IEEE Trans. Compo Pack. Tech. in June 2005
    • (2005) IEEE Trans. Compo Pack. Tech. in June
    • Bai, J.G.1    Zhang, Z.2    Calata, J.N.3    Lu, G.Q.4
  • 15
    • 84971403128 scopus 로고    scopus 로고
    • CREE datasheet: CPWR-0600S0 10 Silicon Carbide Schottky Diodes
    • CREE datasheet: CPWR-0600S0 10 Silicon Carbide Schottky Diodes
  • 16
    • 84971465201 scopus 로고    scopus 로고
    • Processing and characterization of nanoscale silver pastes for attaching semiconductor devices, Submitted to
    • Bai, J. G.; Zhang, Z.; Calata, J.N.; and Lu, G.Q.: Processing and characterization of nanoscale silver pastes for attaching semiconductor devices, Submitted to IEEE Trans. Compo Pack. Tech. in October 2005
    • (2005) IEEE Trans. Compo Pack. Tech. in October
    • Bai, J.G.1    Zhang, Z.2    Calata, J.N.3    Lu, G.Q.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.