Toward discrete axial p-n junction nanowire light-emitting diodes grown by plasma-assisted molecular beam epitaxy

Journal of Electronic Materials

Volumn 42, Issue 5, 2013, Pages 868-874

  Brubaker, Matt D ^a,b   Blanchard, Paul T ^a   Schlager, John B ^a   Sanders, Aric W ^a   Herrero, Andrew M ^a   Roshko, Alexana ^a   Duff, Shannon M ^a   Harvey, Todd E ^a   Bright, Victor M ^b   Sanford, Norman A ^a   Bertness, Kris A ^a  

^a NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

^b University of Colorado at Boulder   (United States)

Author keywords

Gallium nitride; light emitting diodes; molecular beam epitaxy; nanowires

Indexed keywords

ALUMINUM ALLOYS; ALUMINUM GALLIUM NITRIDE; DIODES; ELECTROLUMINESCENCE; ENERGY GAP; GALLIUM NITRIDE; III-V SEMICONDUCTORS; LIGHT; MAGNESIUM; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; NANOWIRES; SEMICONDUCTOR ALLOYS; SEMICONDUCTOR JUNCTIONS;

DEVICE CHARACTERISTICS; ELECTRON BLOCKING LAYER; INTERNAL QUANTUM EFFICIENCY; IV CHARACTERISTICS; NANOWIRE LIGHT EMITTING DIODES; NON-RADIATIVE LOSS; P TYPE CONDUCTIVITY; PLASMA ASSISTED MOLECULAR BEAM EPITAXY;

LIGHT EMITTING DIODES;

EID: 84878552181     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-013-2498-y     Document Type: Article

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